Single-grain thin-film transistor using Ni-mediated crystallization of amorphous silicon with a silicon nitride cap layer

Jung Chul Kim; Jong Hyun Choi; Seung Soo Kim; Kyu Man Kim; Jin Jang

doi:10.1063/1.1633974

Single-grain thin-film transistor using Ni-mediated crystallization of amorphous silicon with a silicon nitride cap layer

Jung Chul Kim
, Jong Hyun Choi
, Seung Soo Kim
, Kyu Man Kim
, Jin Jang

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

The MICC of a-Si was studied and a poly-Si with grain size of ∼40 μm and smooth surface was obtained. The p-channel TFT with a 50 nm thick MICC poly-Si exhibited the field-effect mobility of 114 cm²/Vs, the subthreshold slope of 0.5 V/dec, and the leakage current of 8.5X10^-13 A/μm at the drain voltage of -5 V.

Original language	English
Pages (from-to)	5068-5070
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	24
DOIs	https://doi.org/10.1063/1.1633974
Publication status	Published - 15 Dec 2003

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10.1063/1.1633974

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title = "Single-grain thin-film transistor using Ni-mediated crystallization of amorphous silicon with a silicon nitride cap layer",

abstract = "The MICC of a-Si was studied and a poly-Si with grain size of ∼40 μm and smooth surface was obtained. The p-channel TFT with a 50 nm thick MICC poly-Si exhibited the field-effect mobility of 114 cm2/Vs, the subthreshold slope of 0.5 V/dec, and the leakage current of 8.5X10-13 A/μm at the drain voltage of -5 V.",

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AU - Kim, Jung Chul

AU - Choi, Jong Hyun

AU - Kim, Seung Soo

AU - Kim, Kyu Man

AU - Jang, Jin

PY - 2003/12/15

Y1 - 2003/12/15

N2 - The MICC of a-Si was studied and a poly-Si with grain size of ∼40 μm and smooth surface was obtained. The p-channel TFT with a 50 nm thick MICC poly-Si exhibited the field-effect mobility of 114 cm2/Vs, the subthreshold slope of 0.5 V/dec, and the leakage current of 8.5X10-13 A/μm at the drain voltage of -5 V.

AB - The MICC of a-Si was studied and a poly-Si with grain size of ∼40 μm and smooth surface was obtained. The p-channel TFT with a 50 nm thick MICC poly-Si exhibited the field-effect mobility of 114 cm2/Vs, the subthreshold slope of 0.5 V/dec, and the leakage current of 8.5X10-13 A/μm at the drain voltage of -5 V.

UR - https://www.scopus.com/pages/publications/0347133602

U2 - 10.1063/1.1633974

DO - 10.1063/1.1633974

M3 - Article

AN - SCOPUS:0347133602

SN - 0003-6951

VL - 83

SP - 5068

EP - 5070

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Single-grain thin-film transistor using Ni-mediated crystallization of amorphous silicon with a silicon nitride cap layer

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