Size-and doping-dependent time-resolved photoluminescence of doped Si nanocrystals

Sung Kim; Seung Hui Hong; Jae Hee Park; Dong Yeol Shin; Dong Hee Shin; Suk Ho Choi; Kyung Joong Kim

doi:10.1088/0957-4484/22/27/275205

Size-and doping-dependent time-resolved photoluminescence of doped Si nanocrystals

Sung Kim, Seung Hui Hong, Jae Hee Park, Dong Yeol Shin, Dong Hee Shin, Suk Ho Choi, Kyung Joong Kim

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Time-resolved photoluminescence (PL) has been studied for B-and Sb-doped Si nanocrystals (NCs) fabricated by ion beam sputtering and annealing. For B-doped Si NCs, the PL intensity as well as the PL lifetime (τ_PL) increases as NC size (d) varies from 1.5 to 2.6nm, similar to the case for undoped Si NCs, but with further increase of d, they decrease, possibly resulting from the increase of optically less active NCs with the increase of NCs containing more dopants. The PL intensity and τ_PL monotonically decrease with increasing doping concentration (n_D), irrespective of doping element. Si NCs show smaller τ_PL in B doping than in Sb doping over the full range of n_D. The sharp decrease in PL intensity, accompanied by the gradual decrease in τ_PL for the higher n_D of Sb, may be attributed to Auger recombination due to the presence of Sb inside Si NCs. The higher PL quench rate by Sb compared to B could be attributed to better ionization of Sb dopants in Si NCs.

Original language	English
Article number	275205
Journal	Nanotechnology
Volume	22
Issue number	27
DOIs	https://doi.org/10.1088/0957-4484/22/27/275205
Publication status	Published - 8 Jul 2011

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title = "Size-and doping-dependent time-resolved photoluminescence of doped Si nanocrystals",

abstract = "Time-resolved photoluminescence (PL) has been studied for B-and Sb-doped Si nanocrystals (NCs) fabricated by ion beam sputtering and annealing. For B-doped Si NCs, the PL intensity as well as the PL lifetime (τPL) increases as NC size (d) varies from 1.5 to 2.6nm, similar to the case for undoped Si NCs, but with further increase of d, they decrease, possibly resulting from the increase of optically less active NCs with the increase of NCs containing more dopants. The PL intensity and τPL monotonically decrease with increasing doping concentration (nD), irrespective of doping element. Si NCs show smaller τPL in B doping than in Sb doping over the full range of nD. The sharp decrease in PL intensity, accompanied by the gradual decrease in τPL for the higher nD of Sb, may be attributed to Auger recombination due to the presence of Sb inside Si NCs. The higher PL quench rate by Sb compared to B could be attributed to better ionization of Sb dopants in Si NCs.",

author = "Sung Kim and Hong, {Seung Hui} and Park, {Jae Hee} and Shin, {Dong Yeol} and Shin, {Dong Hee} and Choi, {Suk Ho} and Kim, {Kyung Joong}",

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AU - Kim, Sung

AU - Hong, Seung Hui

AU - Park, Jae Hee

AU - Shin, Dong Yeol

AU - Shin, Dong Hee

AU - Choi, Suk Ho

AU - Kim, Kyung Joong

PY - 2011/7/8

Y1 - 2011/7/8

N2 - Time-resolved photoluminescence (PL) has been studied for B-and Sb-doped Si nanocrystals (NCs) fabricated by ion beam sputtering and annealing. For B-doped Si NCs, the PL intensity as well as the PL lifetime (τPL) increases as NC size (d) varies from 1.5 to 2.6nm, similar to the case for undoped Si NCs, but with further increase of d, they decrease, possibly resulting from the increase of optically less active NCs with the increase of NCs containing more dopants. The PL intensity and τPL monotonically decrease with increasing doping concentration (nD), irrespective of doping element. Si NCs show smaller τPL in B doping than in Sb doping over the full range of nD. The sharp decrease in PL intensity, accompanied by the gradual decrease in τPL for the higher nD of Sb, may be attributed to Auger recombination due to the presence of Sb inside Si NCs. The higher PL quench rate by Sb compared to B could be attributed to better ionization of Sb dopants in Si NCs.

AB - Time-resolved photoluminescence (PL) has been studied for B-and Sb-doped Si nanocrystals (NCs) fabricated by ion beam sputtering and annealing. For B-doped Si NCs, the PL intensity as well as the PL lifetime (τPL) increases as NC size (d) varies from 1.5 to 2.6nm, similar to the case for undoped Si NCs, but with further increase of d, they decrease, possibly resulting from the increase of optically less active NCs with the increase of NCs containing more dopants. The PL intensity and τPL monotonically decrease with increasing doping concentration (nD), irrespective of doping element. Si NCs show smaller τPL in B doping than in Sb doping over the full range of nD. The sharp decrease in PL intensity, accompanied by the gradual decrease in τPL for the higher nD of Sb, may be attributed to Auger recombination due to the presence of Sb inside Si NCs. The higher PL quench rate by Sb compared to B could be attributed to better ionization of Sb dopants in Si NCs.

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Size-and doping-dependent time-resolved photoluminescence of doped Si nanocrystals

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