Size dependence of Si 2p core-level shift at Si nanocrystal/ Si O2 interfaces

Sung Kim, Min Choul Kim, Suk Ho Choi, Kyung Joong Kim, Han Na Hwang, Chan Cook Hwang

Research output: Contribution to journalArticlepeer-review

105 Citations (Scopus)

Abstract

Synchrotron-radiation x-ray photoelectron spectroscopy (XPS) has been used to analyze size-dependent Si 2p core-level spectra of Si nanocrystals (NCs) embedded in Si O2. The Si0 and suboxide XPS peaks of Si NCs shift to higher binding energies with decreasing NC size, which is based on the resolved spectra fitted by using Gaussian-Lorentzian lines for the Si oxidation states. It is also found that the shell region around Si NC bordered by Si O2 consists of the three Si suboxide states, Si1+, Si2+, and Si3+, whose densities are also strongly dependent on NC size. These results suggest that the analysis of the Si 2p core-level shift by XPS is useful for characterizing the size effect of Si NC at the Si NCSi O2 interfaces.

Original languageEnglish
Article number103113
JournalApplied Physics Letters
Volume91
Issue number10
DOIs
Publication statusPublished - 2007

Bibliographical note

Funding Information:
This work was supported by the National Research Program for the 0.1 Terabit Non-Volatile Memory Development sponsored by Korea Ministry of Science and Technology and was performed using the high-voltage electron microscope ( 1.25 MV , JEM-ARM1300S, JEOL, Japan) installed at Korea Basic Science Institute.

Fingerprint

Dive into the research topics of 'Size dependence of Si 2p core-level shift at Si nanocrystal/ Si O2 interfaces'. Together they form a unique fingerprint.

Cite this