Solution-processed ch3nh3pbi3/zno phototransistor with high photodetectivity

Farjana Haque; Md Mehedi Hasan; Mallory Mativenga

doi:10.1002/sdtp.15700

Solution-processed ch3nh3pbi3/zno phototransistor with high photodetectivity

Farjana Haque, Md Mehedi Hasan, Mallory Mativenga

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report a phototransistor using the CH3NH3PbI3/ZnO heterostructure. The CH3NH3PbI3 (MAPbI3) and ZnO are deposited via low-cost solution process. MAPbI3 coated ZnO TFTs exhibited enhanced photocurrent upon exposure to white light. The heterostructure formed between perovskite and ZnO, works as an efficient electron transport layer. The device had a responsivity of 195 A/W and a high detectivity of 1.10 × 10¹³ Jones under white light. The high photo-responsivity and detectivity resulted from the combination of suitable optoelectronic property of MAPbI3 films and the high mobility of the spray coated ZnO films.

Original language	English
Pages (from-to)	1130-1133
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	53
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.15700
Publication status	Published - 2022
Event	59th International Symposium, Seminar and Exhibition, Display Week 2022 - San Jose, United States Duration: 8 May 2022 → 13 May 2022

Bibliographical note

Publisher Copyright:
© 2022. John Wiley and Sons Inc. AIAA. All rights reserved.

Keywords

Methyl ammonium
Perovskite
Photo sensor
Phototransistor
Thin-film transistor
ZnO TFTs

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10.1002/sdtp.15700

Cite this

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title = "Solution-processed ch3nh3pbi3/zno phototransistor with high photodetectivity",

abstract = "We report a phototransistor using the CH3NH3PbI3/ZnO heterostructure. The CH3NH3PbI3 (MAPbI3) and ZnO are deposited via low-cost solution process. MAPbI3 coated ZnO TFTs exhibited enhanced photocurrent upon exposure to white light. The heterostructure formed between perovskite and ZnO, works as an efficient electron transport layer. The device had a responsivity of 195 A/W and a high detectivity of 1.10 × 1013 Jones under white light. The high photo-responsivity and detectivity resulted from the combination of suitable optoelectronic property of MAPbI3 films and the high mobility of the spray coated ZnO films.",

keywords = "Methyl ammonium, Perovskite, Photo sensor, Phototransistor, Thin-film transistor, ZnO TFTs",

author = "Farjana Haque and Hasan, {Md Mehedi} and Mallory Mativenga",

note = "Publisher Copyright: {\textcopyright} 2022. John Wiley and Sons Inc. AIAA. All rights reserved.; 59th International Symposium, Seminar and Exhibition, Display Week 2022 ; Conference date: 08-05-2022 Through 13-05-2022",

year = "2022",

doi = "10.1002/sdtp.15700",

language = "English",

volume = "53",

pages = "1130--1133",

journal = "Digest of Technical Papers - SID International Symposium",

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T1 - Solution-processed ch3nh3pbi3/zno phototransistor with high photodetectivity

AU - Haque, Farjana

AU - Hasan, Md Mehedi

AU - Mativenga, Mallory

PY - 2022

Y1 - 2022

N2 - We report a phototransistor using the CH3NH3PbI3/ZnO heterostructure. The CH3NH3PbI3 (MAPbI3) and ZnO are deposited via low-cost solution process. MAPbI3 coated ZnO TFTs exhibited enhanced photocurrent upon exposure to white light. The heterostructure formed between perovskite and ZnO, works as an efficient electron transport layer. The device had a responsivity of 195 A/W and a high detectivity of 1.10 × 1013 Jones under white light. The high photo-responsivity and detectivity resulted from the combination of suitable optoelectronic property of MAPbI3 films and the high mobility of the spray coated ZnO films.

AB - We report a phototransistor using the CH3NH3PbI3/ZnO heterostructure. The CH3NH3PbI3 (MAPbI3) and ZnO are deposited via low-cost solution process. MAPbI3 coated ZnO TFTs exhibited enhanced photocurrent upon exposure to white light. The heterostructure formed between perovskite and ZnO, works as an efficient electron transport layer. The device had a responsivity of 195 A/W and a high detectivity of 1.10 × 1013 Jones under white light. The high photo-responsivity and detectivity resulted from the combination of suitable optoelectronic property of MAPbI3 films and the high mobility of the spray coated ZnO films.

KW - Methyl ammonium

KW - Perovskite

KW - Photo sensor

KW - Phototransistor

KW - Thin-film transistor

KW - ZnO TFTs

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U2 - 10.1002/sdtp.15700

DO - 10.1002/sdtp.15700

M3 - Conference article

AN - SCOPUS:85135618716

SN - 0097-966X

VL - 53

SP - 1130

EP - 1133

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 59th International Symposium, Seminar and Exhibition, Display Week 2022

Y2 - 8 May 2022 through 13 May 2022

ER -

Solution-processed ch3nh3pbi3/zno phototransistor with high photodetectivity

Abstract

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Keywords

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