Abstract
We have studied the OLED using solution processed n-p junction as HIL. It is found that n-p junction acting as electron-hole generation can be used in OLED instead of HIL of conventional OLED. Our device with n-p junction exhibits similar performance comparable to conventional OLED using HIL by thermal evaporation.
| Original language | English |
|---|---|
| Title of host publication | 21st International Display Workshops 2014, IDW 2014 |
| Publisher | Society for Information Display |
| Pages | 782-785 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781510827790 |
| Publication status | Published - 2014 |
| Event | 21st International Display Workshops 2014, IDW 2014 - Niigata, Japan Duration: 3 Dec 2014 → 5 Dec 2014 |
Publication series
| Name | 21st International Display Workshops 2014, IDW 2014 |
|---|---|
| Volume | 1 |
Conference
| Conference | 21st International Display Workshops 2014, IDW 2014 |
|---|---|
| Country/Territory | Japan |
| City | Niigata |
| Period | 3/12/14 → 5/12/14 |
Bibliographical note
Publisher Copyright:© 2014 ITE and SID.
Keywords
- Hole injection layer
- N-p junction
- Organic light emitting diode
- Solution process
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