Solvent dependency of pentacene degradation for top-gate-type organic ferroelectric memory

Takaya Mabuchi; Sung Min Yoon; Hiroshi Ishiwara

doi:10.1016/j.cap.2011.07.017

Solvent dependency of pentacene degradation for top-gate-type organic ferroelectric memory

Takaya Mabuchi
, Sung Min Yoon
, Hiroshi Ishiwara

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

To minimize the degradation of pentacene films in the fabrication of top-gate-type MFS FETs (metal-ferroelectric-semiconductor field-effect transistors), the characteristics of four solvents which are used for overcoating organic ferroelectric films on pentacene films are investigated by dipping pentacene MOS diodes in these solvents. Then, using appropriate solvents such as 1,4-dioxane, MFS diodes composed of Au, P(VDF-TrFE) (poly(vinylidene fluoride-trifluoroethylene)), and pentacene are fabricated, and then C-V (capacitance vs. voltage) characteristics are investigated. It is concluded from comparison of C-V and data retention characteristics of the top- and bottom-gate-type MFS diodes that degradation of the pentacene film is insignificant when an appropriate solvent is used.

Original language	English
Pages (from-to)	S98-S101
Journal	Current Applied Physics
Volume	11
Issue number	4 SUPPL.
DOIs	https://doi.org/10.1016/j.cap.2011.07.017
Publication status	Published - Jul 2011

Bibliographical note

Funding Information:
A part of this study was supported by the World Class University (WCU) program through the NRF funded by Ministry of Education, Science, and Technology, Korea (No. R31-2008-000-10057-0 ).

Keywords

Ferroelectric
Nonvolatile memory
P(VDF-TrFE)
Pentacene

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10.1016/j.cap.2011.07.017

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@article{43d3bc423b2f48faa609a3dd0e68f43c,

title = "Solvent dependency of pentacene degradation for top-gate-type organic ferroelectric memory",

abstract = "To minimize the degradation of pentacene films in the fabrication of top-gate-type MFS FETs (metal-ferroelectric-semiconductor field-effect transistors), the characteristics of four solvents which are used for overcoating organic ferroelectric films on pentacene films are investigated by dipping pentacene MOS diodes in these solvents. Then, using appropriate solvents such as 1,4-dioxane, MFS diodes composed of Au, P(VDF-TrFE) (poly(vinylidene fluoride-trifluoroethylene)), and pentacene are fabricated, and then C-V (capacitance vs. voltage) characteristics are investigated. It is concluded from comparison of C-V and data retention characteristics of the top- and bottom-gate-type MFS diodes that degradation of the pentacene film is insignificant when an appropriate solvent is used.",

keywords = "Ferroelectric, Nonvolatile memory, P(VDF-TrFE), Pentacene",

author = "Takaya Mabuchi and Yoon, \{Sung Min\} and Hiroshi Ishiwara",

note = "Funding Information: A part of this study was supported by the World Class University (WCU) program through the NRF funded by Ministry of Education, Science, and Technology, Korea (No. R31-2008-000-10057-0 ).",

year = "2011",

month = jul,

doi = "10.1016/j.cap.2011.07.017",

language = "English",

volume = "11",

pages = "S98--S101",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Solvent dependency of pentacene degradation for top-gate-type organic ferroelectric memory

AU - Mabuchi, Takaya

AU - Yoon, Sung Min

AU - Ishiwara, Hiroshi

N1 - Funding Information: A part of this study was supported by the World Class University (WCU) program through the NRF funded by Ministry of Education, Science, and Technology, Korea (No. R31-2008-000-10057-0 ).

PY - 2011/7

Y1 - 2011/7

N2 - To minimize the degradation of pentacene films in the fabrication of top-gate-type MFS FETs (metal-ferroelectric-semiconductor field-effect transistors), the characteristics of four solvents which are used for overcoating organic ferroelectric films on pentacene films are investigated by dipping pentacene MOS diodes in these solvents. Then, using appropriate solvents such as 1,4-dioxane, MFS diodes composed of Au, P(VDF-TrFE) (poly(vinylidene fluoride-trifluoroethylene)), and pentacene are fabricated, and then C-V (capacitance vs. voltage) characteristics are investigated. It is concluded from comparison of C-V and data retention characteristics of the top- and bottom-gate-type MFS diodes that degradation of the pentacene film is insignificant when an appropriate solvent is used.

AB - To minimize the degradation of pentacene films in the fabrication of top-gate-type MFS FETs (metal-ferroelectric-semiconductor field-effect transistors), the characteristics of four solvents which are used for overcoating organic ferroelectric films on pentacene films are investigated by dipping pentacene MOS diodes in these solvents. Then, using appropriate solvents such as 1,4-dioxane, MFS diodes composed of Au, P(VDF-TrFE) (poly(vinylidene fluoride-trifluoroethylene)), and pentacene are fabricated, and then C-V (capacitance vs. voltage) characteristics are investigated. It is concluded from comparison of C-V and data retention characteristics of the top- and bottom-gate-type MFS diodes that degradation of the pentacene film is insignificant when an appropriate solvent is used.

KW - Ferroelectric

KW - Nonvolatile memory

KW - P(VDF-TrFE)

KW - Pentacene

UR - https://www.scopus.com/pages/publications/80455173838

U2 - 10.1016/j.cap.2011.07.017

DO - 10.1016/j.cap.2011.07.017

M3 - Article

AN - SCOPUS:80455173838

SN - 1567-1739

VL - 11

SP - S98-S101

JO - Current Applied Physics

JF - Current Applied Physics

IS - 4 SUPPL.

ER -

Solvent dependency of pentacene degradation for top-gate-type organic ferroelectric memory

Abstract

Bibliographical note

Keywords

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