Abstract
We report the synthesis of a cone-shaped bundle composed of carbon nanotubes (CNTs) in the gate holes by a multi-step growing method: (1) growth of carbon nanotubes in the gate hole; (2) etching the grown CNTs by in situ plasma treatment; (3) regrowth of CNTs. The new CNT bundle in the gate holes exhibited a turn-on gate voltage of 23.5 V, an anode current density of 0.034 mA cm2 at the gate voltage of 30 V, and a transconductance of 2.05× 10-4 S; these are about 50% enhancement compared to conventional CNTs. The field emitter array with the Spindt-type CNTs in the gate holes shows uniform light emission.
| Original language | English |
|---|---|
| Pages (from-to) | 1964-1969 |
| Number of pages | 6 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 23 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2005 |
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