Spontaneous transition in preferred orientation of GaN domains grown on r -plane sapphire substrate from [11 2̄0] to [0001]

Hyun Jae Lee; Jun Seok Ha; T. Goto; T. Yao; Chinkyo Kim; Soon Ku Hong; Jiho Chang

doi:10.1063/1.3097009

Spontaneous transition in preferred orientation of GaN domains grown on r -plane sapphire substrate from [11 2̄0] to [0001]

Hyun Jae Lee
, Jun Seok Ha
, T. Goto
, T. Yao
, Chinkyo Kim
, Soon Ku Hong
, Jiho Chang

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

GaN films were grown at 550 °C and subsequently at 1040 °C on sapphire (10 1- 2) (r -plane) substrates by using hydride vapor phase epitaxy with different layer thicknesses. As the thickness of a low-temperature-grown GaN layer was increased, a preferred orientation of GaN grown at 1040 °C changed from [11 2̄0] to [0001]. A detailed atomistic model reveals that this spontaneous transition in preferred orientation is due to the formation of inversion domain boundaries and stacking faults. This result has a significant implication that tailoring film characteristics in terms of controllability of preferred orientation may be possible independent of substrate orientation.

Original language	English
Article number	102103
Journal	Applied Physics Letters
Volume	94
Issue number	10
DOIs	https://doi.org/10.1063/1.3097009
Publication status	Published - 2009

Bibliographical note

Funding Information:
H.J.L. would like to thank the Japan Society for the Promotion of Science (JSPS) for providing financial support in the form of a JSPS Research Fellowship for Young Scientists. C.K. was supported in part by the Seoul Research and Business Development Program under Grant No. 10583.

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title = "Spontaneous transition in preferred orientation of GaN domains grown on r -plane sapphire substrate from [11 {\=2}0] to [0001]",

abstract = "GaN films were grown at 550 °C and subsequently at 1040 °C on sapphire (10 1- 2) (r -plane) substrates by using hydride vapor phase epitaxy with different layer thicknesses. As the thickness of a low-temperature-grown GaN layer was increased, a preferred orientation of GaN grown at 1040 °C changed from [11 {\=2}0] to [0001]. A detailed atomistic model reveals that this spontaneous transition in preferred orientation is due to the formation of inversion domain boundaries and stacking faults. This result has a significant implication that tailoring film characteristics in terms of controllability of preferred orientation may be possible independent of substrate orientation.",

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note = "Funding Information: H.J.L. would like to thank the Japan Society for the Promotion of Science (JSPS) for providing financial support in the form of a JSPS Research Fellowship for Young Scientists. C.K. was supported in part by the Seoul Research and Business Development Program under Grant No. 10583.",

year = "2009",

doi = "10.1063/1.3097009",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

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T1 - Spontaneous transition in preferred orientation of GaN domains grown on r -plane sapphire substrate from [11 2̄0] to [0001]

AU - Lee, Hyun Jae

AU - Ha, Jun Seok

AU - Goto, T.

AU - Yao, T.

AU - Kim, Chinkyo

AU - Hong, Soon Ku

AU - Chang, Jiho

N1 - Funding Information: H.J.L. would like to thank the Japan Society for the Promotion of Science (JSPS) for providing financial support in the form of a JSPS Research Fellowship for Young Scientists. C.K. was supported in part by the Seoul Research and Business Development Program under Grant No. 10583.

PY - 2009

Y1 - 2009

N2 - GaN films were grown at 550 °C and subsequently at 1040 °C on sapphire (10 1- 2) (r -plane) substrates by using hydride vapor phase epitaxy with different layer thicknesses. As the thickness of a low-temperature-grown GaN layer was increased, a preferred orientation of GaN grown at 1040 °C changed from [11 2̄0] to [0001]. A detailed atomistic model reveals that this spontaneous transition in preferred orientation is due to the formation of inversion domain boundaries and stacking faults. This result has a significant implication that tailoring film characteristics in terms of controllability of preferred orientation may be possible independent of substrate orientation.

AB - GaN films were grown at 550 °C and subsequently at 1040 °C on sapphire (10 1- 2) (r -plane) substrates by using hydride vapor phase epitaxy with different layer thicknesses. As the thickness of a low-temperature-grown GaN layer was increased, a preferred orientation of GaN grown at 1040 °C changed from [11 2̄0] to [0001]. A detailed atomistic model reveals that this spontaneous transition in preferred orientation is due to the formation of inversion domain boundaries and stacking faults. This result has a significant implication that tailoring film characteristics in terms of controllability of preferred orientation may be possible independent of substrate orientation.

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DO - 10.1063/1.3097009

M3 - Article

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VL - 94

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JF - Applied Physics Letters

IS - 10

M1 - 102103

ER -

Spontaneous transition in preferred orientation of GaN domains grown on r -plane sapphire substrate from [11 2̄0] to [0001]

Abstract

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