SrTiO₃-Based Resistive Switching Memory Device with Graphene Nanoribbon Electrodes

We demonstrate the resistive switching behavior on SrTiO₃ (STO) (100) single-crystalline substrate with graphene nanoribbon (GNR) electrodes. The planar GNR was fabricated on STO substrate by means of dip-pen nanolithography and polystyrene-etching techniques. The nanogap for the GNR electrodes was induced by electroburning, which was performed by applying a voltage across the GNR. The nanoscale GNR/STO/GNR RRAM device showed bipolar resistive switching behavior with low set/reset voltages and current as well as good retention characteristics. The bipolar resistive switching behavior might be attributed to roles of oxygen vacancies, originating from intrinsic characteristics of dislocation of STO single crystal.