Stability improvements of InGaZnO thin-film transistors on polyimide substrates with Al2O3 buffer layer

Hye Won Jang; Hyeong Rae Kim; Ji Hee Yang; Chun Won Byun; Chung Seock Kang; Sang Kyun Kim; Sung Min Yoon

doi:10.7567/JJAP.57.090313

Stability improvements of InGaZnO thin-film transistors on polyimide substrates with Al₂O₃ buffer layer

Hye Won Jang
, Hyeong Rae Kim
, Ji Hee Yang
, Chun Won Byun
, Chung Seock Kang
, Sang Kyun Kim
, Sung Min Yoon

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We investigate the effects of atomic layer deposition (ALD)-grown Al₂O₃ buffer layer on the device characteristics of flexible amorphous InGaZnO thin-film transistors (TFTs) fabricated on ultrathin polyimide (PI) films. The TFT with a buffer layer exhibited a saturation mobility of 8.6 cm² V⁻¹ s⁻¹ and a subthreshold swing of 0.16 V dec⁻¹ after annealing at 150 °C. Under negative bias temperature stress at 40 °C, the turn-on voltage instabilities of TFTs with and without the buffer layer were estimated to be −1.0 and −13.2 V, respectively. This marked difference is mainly due to the adsorption of water molecules on the PI film resulting in a positively charged surface.

Original language	English
Journal	Japanese Journal of Applied Physics
Volume	57
Issue number	9
DOIs	https://doi.org/10.7567/JJAP.57.090313
Publication status	Published - Sept 2018

Bibliographical note

Publisher Copyright:
© 2018 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved. This article is available under the terms of the https://publishingsupport.iopscience.iop.org/iop-standard/v1.

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@article{5348b03d25c4428381442607759d2006,

title = "Stability improvements of InGaZnO thin-film transistors on polyimide substrates with Al2O3 buffer layer",

abstract = "We investigate the effects of atomic layer deposition (ALD)-grown Al2O3 buffer layer on the device characteristics of flexible amorphous InGaZnO thin-film transistors (TFTs) fabricated on ultrathin polyimide (PI) films. The TFT with a buffer layer exhibited a saturation mobility of 8.6 cm2 V−1 s−1 and a subthreshold swing of 0.16 V dec−1 after annealing at 150 °C. Under negative bias temperature stress at 40 °C, the turn-on voltage instabilities of TFTs with and without the buffer layer were estimated to be −1.0 and −13.2 V, respectively. This marked difference is mainly due to the adsorption of water molecules on the PI film resulting in a positively charged surface.",

author = "Jang, \{Hye Won\} and Kim, \{Hyeong Rae\} and Yang, \{Ji Hee\} and Byun, \{Chun Won\} and Kang, \{Chung Seock\} and Kim, \{Sang Kyun\} and Yoon, \{Sung Min\}",

note = "Publisher Copyright: {\textcopyright} 2018 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved. This article is available under the terms of the https://publishingsupport.iopscience.iop.org/iop-standard/v1.",

year = "2018",

month = sep,

doi = "10.7567/JJAP.57.090313",

language = "English",

volume = "57",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Stability improvements of InGaZnO thin-film transistors on polyimide substrates with Al2O3 buffer layer

AU - Jang, Hye Won

AU - Kim, Hyeong Rae

AU - Yang, Ji Hee

AU - Byun, Chun Won

AU - Kang, Chung Seock

AU - Kim, Sang Kyun

AU - Yoon, Sung Min

N1 - Publisher Copyright: © 2018 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved. This article is available under the terms of the https://publishingsupport.iopscience.iop.org/iop-standard/v1.

PY - 2018/9

Y1 - 2018/9

N2 - We investigate the effects of atomic layer deposition (ALD)-grown Al2O3 buffer layer on the device characteristics of flexible amorphous InGaZnO thin-film transistors (TFTs) fabricated on ultrathin polyimide (PI) films. The TFT with a buffer layer exhibited a saturation mobility of 8.6 cm2 V−1 s−1 and a subthreshold swing of 0.16 V dec−1 after annealing at 150 °C. Under negative bias temperature stress at 40 °C, the turn-on voltage instabilities of TFTs with and without the buffer layer were estimated to be −1.0 and −13.2 V, respectively. This marked difference is mainly due to the adsorption of water molecules on the PI film resulting in a positively charged surface.

AB - We investigate the effects of atomic layer deposition (ALD)-grown Al2O3 buffer layer on the device characteristics of flexible amorphous InGaZnO thin-film transistors (TFTs) fabricated on ultrathin polyimide (PI) films. The TFT with a buffer layer exhibited a saturation mobility of 8.6 cm2 V−1 s−1 and a subthreshold swing of 0.16 V dec−1 after annealing at 150 °C. Under negative bias temperature stress at 40 °C, the turn-on voltage instabilities of TFTs with and without the buffer layer were estimated to be −1.0 and −13.2 V, respectively. This marked difference is mainly due to the adsorption of water molecules on the PI film resulting in a positively charged surface.

UR - https://www.scopus.com/pages/publications/105038138668

U2 - 10.7567/JJAP.57.090313

DO - 10.7567/JJAP.57.090313

M3 - Article

AN - SCOPUS:85053371808

SN - 0021-4922

VL - 57

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9

ER -

Stability improvements of InGaZnO thin-film transistors on polyimide substrates with Al₂O₃ buffer layer

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