Abstract
A modularization of electronic parts in electrical devices is a key feature for system integration. Especially, X-ray tube fabrication process has been stayed in an obsolete manner due to the utilizing of classical thermionic X-ray sources. But cold cathode emitters such as carbon based materials with nanoscale dimension are expected to replace the conventional wired tungsten filaments due to their outstanding electrical and mechanical properties. To facilitate cold cathode emitter as an xray source, state of the arts bonding techniques are required. In this study, carbon nanotube grown Si wafers were successfully bonded to the metal carrier via vacuum brazing process and no electrical degradation of CNT (carbon nanotubes) emitters were observed after the process. Finally, we evaluated the stability of electron beam current density for device reliability. We expect that the cost-effective and facile technique could be applied for cold cathode based X-ray tube manufacturing process.
Original language | English |
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Title of host publication | 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781538657171 |
DOIs | |
Publication status | Published - 1 Nov 2018 |
Event | 31st International Vacuum Nanoelectronics Conference, IVNC 2018 - Kyoto, Japan Duration: 9 Jul 2018 → 13 Jul 2018 |
Publication series
Name | 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018 |
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Conference
Conference | 31st International Vacuum Nanoelectronics Conference, IVNC 2018 |
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Country/Territory | Japan |
City | Kyoto |
Period | 9/07/18 → 13/07/18 |
Bibliographical note
Publisher Copyright:© 2018 IEEE.
Keywords
- brazing
- carbon nanotubes (CNTs)
- cold cathode
- junction
- xray tube