Abstract
The study of the influence of phosphorous doping and hydrogen content on transport properties and thermally induced metastability of low pressure chemical vapour deposition a-Si is reported. Introduction of hydrogen causes change of dominant carrier transport mechanism at room temperature. The thermally induced metastability was observed in both unhydrogenated and hydrogenated P-doped a-Si films. In this paper we report our studies on the effect of the thermally induced metastability in unhydrogenated and hydrogenated films of LPCVD a-Si, as a function of phosphorous concentration.
| Original language | English |
|---|---|
| Pages (from-to) | 78-81 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 337 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 11 Jan 1999 |
Bibliographical note
Copyright:Copyright 2018 Elsevier B.V., All rights reserved.
Keywords
- Amorphous silicon
- Doping
- Hydrogenation
- Metastability
- Quenching
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