Abstract
We present stretchable amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) transferred onto styrene ethylene/butylene styrene (SEBS) thermoplastic elastomer. The fabricated stretchable oxide TFT showed electrical properties even after 40% strain without mechanical and electrical degradations. This stiff island on the stretchable substrate was demonstrated to enable for stretchable electronics.
| Original language | English |
|---|---|
| Title of host publication | 26th International Display Workshops, IDW 2019 |
| Publisher | International Display Workshops |
| Pages | 401-404 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781713806301 |
| Publication status | Published - 2019 |
| Event | 26th International Display Workshops, IDW 2019 - Sapporo, Japan Duration: 27 Nov 2019 → 29 Nov 2019 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 2 |
| ISSN (Print) | 1883-2490 |
Conference
| Conference | 26th International Display Workshops, IDW 2019 |
|---|---|
| Country/Territory | Japan |
| City | Sapporo |
| Period | 27/11/19 → 29/11/19 |
Bibliographical note
Publisher Copyright:© 2019 ITE and SID.
Keywords
- Amorphous indium-gallium-zinc-oxide (a-IGZO)
- Stretchable substrate
- Thin-film transistor (TFT)
Fingerprint
Dive into the research topics of 'Stretchable oxide TFTs on PI/SEBS substrate'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver