TY - JOUR
T1 - Strong enhancement of near-band-edge photoluminescence from ZnO by assembling ZnO/SiOx heterostructures
AU - Kim, Sung
AU - Oh Kim, Chang
AU - Taek Oh, Hyoung
AU - Choi, Suk Ho
N1 - Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2008
Y1 - 2008
N2 - Double layers of 100 nm ZnO/300 nm SiOx have been grown on Si (1 0 0) by radio-frequency sputtering and ion beam sputtering deposition, respectively. The oxygen content (x) of SiOx is varied from 0.8 to 1.8, as controlled and determined by x-ray photoelectron spectroscopy analysis. Optical and structural properties of the ZnO/SiOx heterostructures annealed at 900 °C for 20 min are studied by photoluminescence (PL), high-resolution transmission electron microscopy and near-edge x-ray absorption fine structure (NEXAFS) analysis. The near-band-edge PL spectrum of the heterostructures is almost 4 times enhanced at x = 1.0, compared with that of ZnO single layer, and its peak energy, intensity and shape strongly depend on the x value. These results are attributed to the band bending at the ZnO/SiOx interface, as confirmed by the NEXAFS analysis.
AB - Double layers of 100 nm ZnO/300 nm SiOx have been grown on Si (1 0 0) by radio-frequency sputtering and ion beam sputtering deposition, respectively. The oxygen content (x) of SiOx is varied from 0.8 to 1.8, as controlled and determined by x-ray photoelectron spectroscopy analysis. Optical and structural properties of the ZnO/SiOx heterostructures annealed at 900 °C for 20 min are studied by photoluminescence (PL), high-resolution transmission electron microscopy and near-edge x-ray absorption fine structure (NEXAFS) analysis. The near-band-edge PL spectrum of the heterostructures is almost 4 times enhanced at x = 1.0, compared with that of ZnO single layer, and its peak energy, intensity and shape strongly depend on the x value. These results are attributed to the band bending at the ZnO/SiOx interface, as confirmed by the NEXAFS analysis.
UR - http://www.scopus.com/inward/record.url?scp=67650554733&partnerID=8YFLogxK
U2 - 10.1088/0022-3727/41/23/235403
DO - 10.1088/0022-3727/41/23/235403
M3 - Article
AN - SCOPUS:67650554733
SN - 0022-3727
VL - 41
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
IS - 23
M1 - 235403
ER -