Strong visible PL from the nc-Si thin film by Ni silicide mediated crystallization

Do Young Kim; Ji Sim Jung; Young Rae Jang; Kun Ho Yoo; Jin Jang

doi:10.1016/S1386-9477(02)00611-2

Strong visible PL from the nc-Si thin film by Ni silicide mediated crystallization

Do Young Kim, Ji Sim Jung, Young Rae Jang, Kun Ho Yoo, Jin Jang

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

We studied the growth of nanocrystalline silicon (nc-Si) thin film exhibiting a strong room temperature photoluminescence (PL) at 1.81-2.003 eV. The amorphous silicon was crystallized by Ni silicide mediated crystallization (Ni SMC) and then Secco-etched to exhibit the PL. The PL peak energy and intensity increase with increasing the metal density on the a-Si because of the reduction in the grain size down to 2 nm. The photoluminescence energy and peak intensity depend strongly on the Secco etch time because the grain size is reduced by etching the grain boundaries.

Original language	English
Pages (from-to)	400-403
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	16
Issue number	3-4
DOIs	https://doi.org/10.1016/S1386-9477(02)00611-2
Publication status	Published - Mar 2003
Event	Symposium H of the Spring Meeting of the Europe (E-MRS-02H) - Strasbourgh, France Duration: 18 Jun 2002 → 21 Jun 2002

Keywords

Nanocrystalline silicon
Photoluminescence

Access to Document

10.1016/S1386-9477(02)00611-2

Cite this

@article{1cbeedd2bc2b41cc87e89465f9d352c3,

title = "Strong visible PL from the nc-Si thin film by Ni silicide mediated crystallization",

abstract = "We studied the growth of nanocrystalline silicon (nc-Si) thin film exhibiting a strong room temperature photoluminescence (PL) at 1.81-2.003 eV. The amorphous silicon was crystallized by Ni silicide mediated crystallization (Ni SMC) and then Secco-etched to exhibit the PL. The PL peak energy and intensity increase with increasing the metal density on the a-Si because of the reduction in the grain size down to 2 nm. The photoluminescence energy and peak intensity depend strongly on the Secco etch time because the grain size is reduced by etching the grain boundaries.",

keywords = "Nanocrystalline silicon, Photoluminescence",

author = "Kim, {Do Young} and Jung, {Ji Sim} and Jang, {Young Rae} and Yoo, {Kun Ho} and Jin Jang",

year = "2003",

month = mar,

doi = "10.1016/S1386-9477(02)00611-2",

language = "English",

volume = "16",

pages = "400--403",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "3-4",

}

TY - JOUR

T1 - Strong visible PL from the nc-Si thin film by Ni silicide mediated crystallization

AU - Kim, Do Young

AU - Jung, Ji Sim

AU - Jang, Young Rae

AU - Yoo, Kun Ho

AU - Jang, Jin

PY - 2003/3

Y1 - 2003/3

N2 - We studied the growth of nanocrystalline silicon (nc-Si) thin film exhibiting a strong room temperature photoluminescence (PL) at 1.81-2.003 eV. The amorphous silicon was crystallized by Ni silicide mediated crystallization (Ni SMC) and then Secco-etched to exhibit the PL. The PL peak energy and intensity increase with increasing the metal density on the a-Si because of the reduction in the grain size down to 2 nm. The photoluminescence energy and peak intensity depend strongly on the Secco etch time because the grain size is reduced by etching the grain boundaries.

AB - We studied the growth of nanocrystalline silicon (nc-Si) thin film exhibiting a strong room temperature photoluminescence (PL) at 1.81-2.003 eV. The amorphous silicon was crystallized by Ni silicide mediated crystallization (Ni SMC) and then Secco-etched to exhibit the PL. The PL peak energy and intensity increase with increasing the metal density on the a-Si because of the reduction in the grain size down to 2 nm. The photoluminescence energy and peak intensity depend strongly on the Secco etch time because the grain size is reduced by etching the grain boundaries.

KW - Nanocrystalline silicon

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=0037370489&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(02)00611-2

DO - 10.1016/S1386-9477(02)00611-2

M3 - Conference article

AN - SCOPUS:0037370489

SN - 1386-9477

VL - 16

SP - 400

EP - 403

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 3-4

T2 - Symposium H of the Spring Meeting of the Europe (E-MRS-02H)

Y2 - 18 June 2002 through 21 June 2002

ER -

Strong visible PL from the nc-Si thin film by Ni silicide mediated crystallization

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this