Structural, magnetotransport and subband studies of an In 0.52Al0.48As/In0.53Ga0.47As one-side modulation-doped quantum well

T. W. Kim; M. Jung; K. Y. Seo; K. H. Yoo; Jeong Yong Lee; S. J. Lee

doi:10.1088/0268-1242/9/8/004

Structural, magnetotransport and subband studies of an In _0.52Al_0.48As/In_0.53Ga_0.47As one-side modulation-doped quantum well

T. W. Kim, M. Jung, K. Y. Seo, K. H. Yoo, Jeong Yong Lee, S. J. Lee

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Shubnikov-de Haas (SdH) and van der Pauw Hall effect measurements on In_0.52Al_0.48As/In_0.53Ga_0.47As/ In_0.52Al$ d0_.48As one-side modulation-doped quantum wells grown by metalorganic chemical vapour deposition have been carried out to investigate the magnetotransport properties of an electron gas and to determine the subband energies and wavefunctions in a single quantum well. Transmission electron microscopy measurements show that the In_0.53 Ga _0.47As/In_0.52Al_0.48As heterointerfaces have a perfect lattice match. The SdH measurements at 1.5 K have demonstrated clearly the existence of a quasi-two-dimensional electron gas in the quantum well. The fast Fourier transformation results for the SdH data indicate clearly the occupation of two subbands in the In_0.53Ga_0.47As single quantum well. Electron energy subbands in the quantum well were calculated by a self-consistent method taking into account exchange-correlation effects and making use of the experimentally determined carrier density.

Original language	English
Article number	004
Pages (from-to)	1470-1473
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	9
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/9/8/004
Publication status	Published - 1994

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title = "Structural, magnetotransport and subband studies of an In 0.52Al0.48As/In0.53Ga0.47As one-side modulation-doped quantum well",

abstract = "Shubnikov-de Haas (SdH) and van der Pauw Hall effect measurements on In0.52Al0.48As/In0.53Ga0.47As/ In0.52Al$ d0.48As one-side modulation-doped quantum wells grown by metalorganic chemical vapour deposition have been carried out to investigate the magnetotransport properties of an electron gas and to determine the subband energies and wavefunctions in a single quantum well. Transmission electron microscopy measurements show that the In0.53 Ga 0.47As/In0.52Al0.48As heterointerfaces have a perfect lattice match. The SdH measurements at 1.5 K have demonstrated clearly the existence of a quasi-two-dimensional electron gas in the quantum well. The fast Fourier transformation results for the SdH data indicate clearly the occupation of two subbands in the In0.53Ga0.47As single quantum well. Electron energy subbands in the quantum well were calculated by a self-consistent method taking into account exchange-correlation effects and making use of the experimentally determined carrier density.",

author = "Kim, {T. W.} and M. Jung and Seo, {K. Y.} and Yoo, {K. H.} and Lee, {Jeong Yong} and Lee, {S. J.}",

year = "1994",

doi = "10.1088/0268-1242/9/8/004",

language = "English",

volume = "9",

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T1 - Structural, magnetotransport and subband studies of an In 0.52Al0.48As/In0.53Ga0.47As one-side modulation-doped quantum well

AU - Kim, T. W.

AU - Jung, M.

AU - Seo, K. Y.

AU - Yoo, K. H.

AU - Lee, Jeong Yong

AU - Lee, S. J.

PY - 1994

Y1 - 1994

N2 - Shubnikov-de Haas (SdH) and van der Pauw Hall effect measurements on In0.52Al0.48As/In0.53Ga0.47As/ In0.52Al$ d0.48As one-side modulation-doped quantum wells grown by metalorganic chemical vapour deposition have been carried out to investigate the magnetotransport properties of an electron gas and to determine the subband energies and wavefunctions in a single quantum well. Transmission electron microscopy measurements show that the In0.53 Ga 0.47As/In0.52Al0.48As heterointerfaces have a perfect lattice match. The SdH measurements at 1.5 K have demonstrated clearly the existence of a quasi-two-dimensional electron gas in the quantum well. The fast Fourier transformation results for the SdH data indicate clearly the occupation of two subbands in the In0.53Ga0.47As single quantum well. Electron energy subbands in the quantum well were calculated by a self-consistent method taking into account exchange-correlation effects and making use of the experimentally determined carrier density.

AB - Shubnikov-de Haas (SdH) and van der Pauw Hall effect measurements on In0.52Al0.48As/In0.53Ga0.47As/ In0.52Al$ d0.48As one-side modulation-doped quantum wells grown by metalorganic chemical vapour deposition have been carried out to investigate the magnetotransport properties of an electron gas and to determine the subband energies and wavefunctions in a single quantum well. Transmission electron microscopy measurements show that the In0.53 Ga 0.47As/In0.52Al0.48As heterointerfaces have a perfect lattice match. The SdH measurements at 1.5 K have demonstrated clearly the existence of a quasi-two-dimensional electron gas in the quantum well. The fast Fourier transformation results for the SdH data indicate clearly the occupation of two subbands in the In0.53Ga0.47As single quantum well. Electron energy subbands in the quantum well were calculated by a self-consistent method taking into account exchange-correlation effects and making use of the experimentally determined carrier density.

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DO - 10.1088/0268-1242/9/8/004

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SN - 0268-1242

VL - 9

SP - 1470

EP - 1473

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

M1 - 004

ER -

Structural, magnetotransport and subband studies of an In _0.52Al_0.48As/In_0.53Ga_0.47As one-side modulation-doped quantum well

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