Abstract
In order to reach high quality of organic thin films such as high mobility for device applications, it is strongly desirable to study the growth properties of pentacene film as a function of evaporation conditions. Here, we report the structure and morphology of thermal evaporated pentacene thin film by Atomic Force Microscope (AFM), Scanning Electron Microscope (SEM), and X-ray diffractometry (XRD) as a function of the evaporation rate and substrate temperature. These results play a key role in determining the electrical performance of organic thin film transistor devices.
| Original language | English |
|---|---|
| Pages (from-to) | S647-S651 |
| Journal | Journal of the Korean Physical Society |
| Volume | 42 |
| Issue number | SPEC. |
| Publication status | Published - Feb 2003 |
| Event | Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 20 Aug 2002 → 23 Aug 2002 |
Keywords
- Re-evaporation
- Vacuum-evaporated pentacene