Abstract
We used spectroscopic ellipsometry (SE) to study optical properties of polycrystalline Si prepared by Ni-silicide-mediated crystallization. Amorphous (a-)Si films were deposited on Corning glass by plasma-enhanced chemical vapor deposition. Then a very thin layer of Ni was deposited on the a-Si films. For low temperature crystallization, a lateral electric field was applied to the a-Si film. We quantified crystallization of the a-Si film using pseudodielectric functions obtained by SE with Bruggeman effective medium approximation.
| Original language | English |
|---|---|
| Pages (from-to) | S173-S175 |
| Journal | Journal of the Korean Physical Society |
| Volume | 42 |
| Issue number | SPEC. |
| Publication status | Published - Feb 2003 |
| Event | Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 20 Aug 2002 → 23 Aug 2002 |
Keywords
- Crystallization
- EMA
- Ellipsometry
- Poly-Si