Study of the dielectric function of ZnS by spectroscopic ellipsometry

T. H. Ghong; T. J. Kim; Y. D. Kim; S. J. Kim; D. E. Aspnes; Y. D. Choi; Y. M. Yu

Study of the dielectric function of ZnS by spectroscopic ellipsometry

T. H. Ghong, T. J. Kim, Y. D. Kim, S. J. Kim, D. E. Aspnes, Y. D. Choi, Y. M. Yu

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

We report the best room-temperature dielectric function data for zincblende-type ZnS from 3.7 to 6.0 eV, obtained by spectroscopic ellipsometry together with real-time assessment of overlayer removal. These data were extended to 9.0 eV (without chemical etching) using a variable-angle system. This permits the first detailed analysis of the E₂ band gap of ZnS, revealing 3 bandgaps in this spectral region.

Original language	English
Pages (from-to)	S238-S241
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
Publication status	Published - Feb 2003
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 20 Aug 2002 → 23 Aug 2002

Keywords

Band gap
Ellipsometry
ZnS

Cite this

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title = "Study of the dielectric function of ZnS by spectroscopic ellipsometry",

abstract = "We report the best room-temperature dielectric function data for zincblende-type ZnS from 3.7 to 6.0 eV, obtained by spectroscopic ellipsometry together with real-time assessment of overlayer removal. These data were extended to 9.0 eV (without chemical etching) using a variable-angle system. This permits the first detailed analysis of the E2 band gap of ZnS, revealing 3 bandgaps in this spectral region.",

keywords = "Band gap, Ellipsometry, ZnS",

author = "Ghong, {T. H.} and Kim, {T. J.} and Kim, {Y. D.} and Kim, {S. J.} and Aspnes, {D. E.} and Choi, {Y. D.} and Yu, {Y. M.}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S238--S241",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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TY - JOUR

T1 - Study of the dielectric function of ZnS by spectroscopic ellipsometry

AU - Ghong, T. H.

AU - Kim, T. J.

AU - Kim, Y. D.

AU - Kim, S. J.

AU - Aspnes, D. E.

AU - Choi, Y. D.

AU - Yu, Y. M.

PY - 2003/2

Y1 - 2003/2

N2 - We report the best room-temperature dielectric function data for zincblende-type ZnS from 3.7 to 6.0 eV, obtained by spectroscopic ellipsometry together with real-time assessment of overlayer removal. These data were extended to 9.0 eV (without chemical etching) using a variable-angle system. This permits the first detailed analysis of the E2 band gap of ZnS, revealing 3 bandgaps in this spectral region.

AB - We report the best room-temperature dielectric function data for zincblende-type ZnS from 3.7 to 6.0 eV, obtained by spectroscopic ellipsometry together with real-time assessment of overlayer removal. These data were extended to 9.0 eV (without chemical etching) using a variable-angle system. This permits the first detailed analysis of the E2 band gap of ZnS, revealing 3 bandgaps in this spectral region.

KW - Band gap

KW - Ellipsometry

KW - ZnS

UR - http://www.scopus.com/inward/record.url?scp=0037307580&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0037307580

SN - 0374-4884

VL - 42

SP - S238-S241

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002

ER -

Study of the dielectric function of ZnS by spectroscopic ellipsometry

Abstract

Keywords

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