Study of the dielectric function of ZnS by spectroscopic ellipsometry

T. H. Ghong; T. J. Kim; Y. D. Kim; S. J. Kim; D. E. Aspnes; Y. D. Choi; Y. M. Yu

Study of the dielectric function of ZnS by spectroscopic ellipsometry

T. H. Ghong
, T. J. Kim
, Y. D. Kim
, S. J. Kim
, D. E. Aspnes
, Y. D. Choi
, Y. M. Yu

Research output: Contribution to journal › Conference article › peer-review

12 Citations (Scopus)

Abstract

We report the best room-temperature dielectric function data for zincblende-type ZnS from 3.7 to 6.0 eV, obtained by spectroscopic ellipsometry together with real-time assessment of overlayer removal. These data were extended to 9.0 eV (without chemical etching) using a variable-angle system. This permits the first detailed analysis of the E₂ band gap of ZnS, revealing 3 bandgaps in this spectral region.

Original language	English
Pages (from-to)	S238-S241
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
Publication status	Published - Feb 2003
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 20 Aug 2002 → 23 Aug 2002

Keywords

Band gap
Ellipsometry
ZnS

Cite this

@article{fd8a5cfc6530426a94ce5a02560e258a,

title = "Study of the dielectric function of ZnS by spectroscopic ellipsometry",

abstract = "We report the best room-temperature dielectric function data for zincblende-type ZnS from 3.7 to 6.0 eV, obtained by spectroscopic ellipsometry together with real-time assessment of overlayer removal. These data were extended to 9.0 eV (without chemical etching) using a variable-angle system. This permits the first detailed analysis of the E2 band gap of ZnS, revealing 3 bandgaps in this spectral region.",

keywords = "Band gap, Ellipsometry, ZnS",

author = "Ghong, \{T. H.\} and Kim, \{T. J.\} and Kim, \{Y. D.\} and Kim, \{S. J.\} and Aspnes, \{D. E.\} and Choi, \{Y. D.\} and Yu, \{Y. M.\}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S238--S241",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SPEC.",

}

TY - JOUR

T1 - Study of the dielectric function of ZnS by spectroscopic ellipsometry

AU - Ghong, T. H.

AU - Kim, T. J.

AU - Kim, Y. D.

AU - Kim, S. J.

AU - Aspnes, D. E.

AU - Choi, Y. D.

AU - Yu, Y. M.

PY - 2003/2

Y1 - 2003/2

N2 - We report the best room-temperature dielectric function data for zincblende-type ZnS from 3.7 to 6.0 eV, obtained by spectroscopic ellipsometry together with real-time assessment of overlayer removal. These data were extended to 9.0 eV (without chemical etching) using a variable-angle system. This permits the first detailed analysis of the E2 band gap of ZnS, revealing 3 bandgaps in this spectral region.

AB - We report the best room-temperature dielectric function data for zincblende-type ZnS from 3.7 to 6.0 eV, obtained by spectroscopic ellipsometry together with real-time assessment of overlayer removal. These data were extended to 9.0 eV (without chemical etching) using a variable-angle system. This permits the first detailed analysis of the E2 band gap of ZnS, revealing 3 bandgaps in this spectral region.

KW - Band gap

KW - Ellipsometry

KW - ZnS

UR - https://www.scopus.com/pages/publications/0037307580

M3 - Conference article

AN - SCOPUS:0037307580

SN - 0374-4884

VL - 42

SP - S238-S241

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002

ER -

Study of the dielectric function of ZnS by spectroscopic ellipsometry

Abstract

Keywords

Other files and links

Fingerprint

Cite this