Abstract
We studied the capacitance-voltage (C-V) characteristics of poly-silicon thin-film transistors (TFT). The capacitance can be explained by a model having three capacitance components for gate insulator of oxide, gate-to-source/drain overlap and source/drain lateral pn junction.
| Original language | English |
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| Pages | 1761-1764 |
| Number of pages | 4 |
| Publication status | Published - 2009 |
| Event | 16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 9 Dec 2009 → 11 Dec 2009 |
Conference
| Conference | 16th International Display Workshops, IDW '09 |
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| Country/Territory | Japan |
| City | Miyazaki |
| Period | 9/12/09 → 11/12/09 |