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Study on parasitic and channel resistance of poly-silicon thin-film transistors by metal-induced crystallization

  • Saurabh Saxena
  • , Jun Hyuk Cheon
  • , G. P. Kennedy
  • , Jung Ho Bae
  • , Jin Jang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We studied the temperature dependent transfer characteristics of the poly-Si TFTs fabricated by metal-induced crystallization through a cap (MICC) to evaluate the temperature dependent parasitic and channel resistances. For p-channel MICC TFTs, the channel width 12 μm was kept constant and channel lengths were varied as 6, 12, and 24 μm respectively. The MICC p-channel TFTs studied in the present work showed maximum field-effect mobility, threshold voltage and gate swing of 53 cm2/Vs, -4.4V and 0.8 V/dec, for W/L =12/6, 71 cm2/Vs, -5.3V and 0.9 V/dec for W/L = 12/12 and 113cm 2/Vs, -7V and 1 V/dec for W/L = 12/24 respectively. It is found that the parasitic and channel resistance decrease with increasing the temperature.

Original languageEnglish
Title of host publicationSociety for Information Display - 10th Asian Symposium on Information Display 2007, ASID'07
Pages265-270
Number of pages6
Publication statusPublished - 2007
Event10th Asian Symposium on Information Display, ASID'07 - Singapore, Singapore
Duration: 2 Aug 20073 Aug 2007

Publication series

NameSociety for Information Display - 10th Asian Symposium on Information Display 2007, ASID'07

Conference

Conference10th Asian Symposium on Information Display, ASID'07
Country/TerritorySingapore
CitySingapore
Period2/08/073/08/07

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