Study on the polycrystalline silicon films deposited by inductively coupled plasma chemical vapor deposition

Byeong Y. Moon; Jae H. Youn; Sung H. Won; Jin Jang; Stanislaw M. Pietruszko

doi:10.1557/proc-685-d5.2.1

Study on the polycrystalline silicon films deposited by inductively coupled plasma chemical vapor deposition

Byeong Y. Moon, Jae H. Youn, Sung H. Won, Jin Jang, Stanislaw M. Pietruszko

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Polycrystalline silicon thin films have been deposited by an inductively coupled plasma chemical vapor deposition using SiH₄/H₂ mixtures. The quality of poly-Si can be improved by increasing RF power and hydrogen dilution ratio. The poly-Si deposited at a RF power of 1000 W with an addition of H₂, showed a Raman polycrystalline volume fraction of 85.7 %, FWHM of 6.4 cm^-1, deposition rate of 9.64 Å/s and SEM grain size of ∼3000 Å.

Original language	English
Title of host publication	Advanced Materials and Devices for Large-Area Electronics
Publisher	Materials Research Society
Pages	100-105
Number of pages	6
ISBN (Print)	1558996214, 9781558996212
DOIs	https://doi.org/10.1557/proc-685-d5.2.1
Publication status	Published - 2001
Event	2001 MRS Spring Meeting - San Francisco, CA, United States Duration: 16 Apr 2001 → 20 Apr 2001

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	685
ISSN (Print)	0272-9172

Conference

Conference	2001 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	16/04/01 → 20/04/01

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10.1557/proc-685-d5.2.1

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Moon, B. Y., Youn, J. H., Won, S. H., Jang, J., & Pietruszko, S. M. (2001). Study on the polycrystalline silicon films deposited by inductively coupled plasma chemical vapor deposition. In Advanced Materials and Devices for Large-Area Electronics (pp. 100-105). (Materials Research Society Symposium Proceedings; Vol. 685). Materials Research Society. https://doi.org/10.1557/proc-685-d5.2.1

@inproceedings{1aa5a66862e64bfba4e0567ab14098c5,

title = "Study on the polycrystalline silicon films deposited by inductively coupled plasma chemical vapor deposition",

abstract = "Polycrystalline silicon thin films have been deposited by an inductively coupled plasma chemical vapor deposition using SiH4/H2 mixtures. The quality of poly-Si can be improved by increasing RF power and hydrogen dilution ratio. The poly-Si deposited at a RF power of 1000 W with an addition of H2, showed a Raman polycrystalline volume fraction of 85.7 %, FWHM of 6.4 cm-1, deposition rate of 9.64 {\AA}/s and SEM grain size of ∼3000 {\AA}.",

author = "Moon, {Byeong Y.} and Youn, {Jae H.} and Won, {Sung H.} and Jin Jang and Pietruszko, {Stanislaw M.}",

year = "2001",

doi = "10.1557/proc-685-d5.2.1",

language = "English",

isbn = "1558996214",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "100--105",

booktitle = "Advanced Materials and Devices for Large-Area Electronics",

}

Moon, BY, Youn, JH, Won, SH, Jang, J & Pietruszko, SM 2001, Study on the polycrystalline silicon films deposited by inductively coupled plasma chemical vapor deposition. in Advanced Materials and Devices for Large-Area Electronics. Materials Research Society Symposium Proceedings, vol. 685, Materials Research Society, pp. 100-105, 2001 MRS Spring Meeting, San Francisco, CA, United States, 16/04/01. https://doi.org/10.1557/proc-685-d5.2.1

Study on the polycrystalline silicon films deposited by inductively coupled plasma chemical vapor deposition. / Moon, Byeong Y.; Youn, Jae H.; Won, Sung H. et al.
Advanced Materials and Devices for Large-Area Electronics. Materials Research Society, 2001. p. 100-105 (Materials Research Society Symposium Proceedings; Vol. 685).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Study on the polycrystalline silicon films deposited by inductively coupled plasma chemical vapor deposition

AU - Moon, Byeong Y.

AU - Youn, Jae H.

AU - Won, Sung H.

AU - Jang, Jin

AU - Pietruszko, Stanislaw M.

PY - 2001

Y1 - 2001

N2 - Polycrystalline silicon thin films have been deposited by an inductively coupled plasma chemical vapor deposition using SiH4/H2 mixtures. The quality of poly-Si can be improved by increasing RF power and hydrogen dilution ratio. The poly-Si deposited at a RF power of 1000 W with an addition of H2, showed a Raman polycrystalline volume fraction of 85.7 %, FWHM of 6.4 cm-1, deposition rate of 9.64 Å/s and SEM grain size of ∼3000 Å.

AB - Polycrystalline silicon thin films have been deposited by an inductively coupled plasma chemical vapor deposition using SiH4/H2 mixtures. The quality of poly-Si can be improved by increasing RF power and hydrogen dilution ratio. The poly-Si deposited at a RF power of 1000 W with an addition of H2, showed a Raman polycrystalline volume fraction of 85.7 %, FWHM of 6.4 cm-1, deposition rate of 9.64 Å/s and SEM grain size of ∼3000 Å.

UR - http://www.scopus.com/inward/record.url?scp=34249870103&partnerID=8YFLogxK

U2 - 10.1557/proc-685-d5.2.1

DO - 10.1557/proc-685-d5.2.1

M3 - Conference contribution

AN - SCOPUS:34249870103

SN - 1558996214

SN - 9781558996212

T3 - Materials Research Society Symposium Proceedings

SP - 100

EP - 105

BT - Advanced Materials and Devices for Large-Area Electronics

PB - Materials Research Society

T2 - 2001 MRS Spring Meeting

Y2 - 16 April 2001 through 20 April 2001

ER -

Study on the polycrystalline silicon films deposited by inductively coupled plasma chemical vapor deposition

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