Abstract
The electrical current of porous silicon (PS) has been measured while several treatments are made to the samples. When the samples are exposed to air, the DC current increases or decreases depending on the surface conditions of the samples. These results, found to be caused by water vapors in air, can be explained based upon the adsorbate-induced surface band bending. Photon soaking in air alters the direction of current change after air exposure and Fourier Transform Infrared Spectra show a redistribution of surface adsorbates after photon soaking in air. This indicates that photon soaking in air can cause a change in the band bending on the surface of PS.
| Original language | English |
|---|---|
| Pages (from-to) | 207-211 |
| Number of pages | 5 |
| Journal | Superlattices and Microstructures |
| Volume | 20 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Sept 1996 |
Bibliographical note
Funding Information:Acknowledgement—The present studies were partially supported by the Basic Science Research Program, Ministry of Education, 1995, Project No. BSRI-’95-2443 and the 1996 Research Fund of Kyung Hee University.
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