Surface Engineering of Room Temperature-Grown Inorganic Perovskite Quantum Dots for Highly Efficient Inverted Light-Emitting Diodes

Inorganic cesium lead bromide quantum dots (CsPbBr ₃ QDs) are usually synthesized via a higherature process (hot injection, HI). This process is similar to that used for the synthesis of other semiconductor QDs (i.e., CdSe@ZnS), which limits their potential cost advantage. CsPbBr ₃ QDs can also be synthesized at room temperature (RT) in a low cost and easily scalable process, which, thus, is one of the greatest advantages of the CsPbBr ₃ QDs. However, light-emitting diodes (LEDs) fabricated using RT-QDs exhibit poor performance compared to those of HI-QDs. In fact, QDs are surrounded by insulating ligands to maintain their colloidal stability but these ligands need to be removed to obtain high-performance LEDs. Here, we show that ligand removal techniques used for HI-QDs are not sufficient in the case of RT-QDs. Additional ligand engineering and annealing steps are necessary to remove the excess of ligands from RT-QD films while preventing the coalescence of the QDs. The eventual surface defects induced by annealing can be healed by a subsequent photoactivation step. Moreover, the use of solution processable inorganic charge transport layers can reduce the fabrication costs of LEDs. We fabricated an inverted LED based on a metal oxide electron transport layer and a RT-QD emitting layer which exhibited a maximum current efficiency of 17.61 cd A ^-1 and a maximum luminance of 22 825 cd m ^-2 .