Switching property of carbon nanotube emitters with MOSFET

Woo Mi Bae; Na Young Bae; Hey Mi Oh; Eun Hye Lee; An Na Ha; Jin Jang; Kyu Chang Park

Switching property of carbon nanotube emitters with MOSFET

Woo Mi Bae, Na Young Bae, Hey Mi Oh, Eun Hye Lee, An Na Ha, Jin Jang, Kyu Chang Park

Research output: Contribution to conference › Paper › peer-review

Abstract

The switching control of electron emission of carbon nanotubes emitters is required for various vacuum nanoelectronic device applications. The electron emission current of CNTs was well switched with a low voltage with MOSFET. We analyze switching properties of CNT emitters. For 500 μ;A emission current switching, the electron emitter shows saturation current region between 1,300 V to 2,100 V anode bias. The emitter keeps constant electron emission current between that 800 V region with 0.02 % variation.

Original language	English
Pages	1615-1618
Number of pages	4
Publication status	Published - 2010
Event	17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 1 Dec 2010 → 3 Dec 2010

Conference

Conference	17th International Display Workshops, IDW'10
Country/Territory	Japan
City	Fukuoka
Period	1/12/10 → 3/12/10

Cite this

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title = "Switching property of carbon nanotube emitters with MOSFET",

abstract = "The switching control of electron emission of carbon nanotubes emitters is required for various vacuum nanoelectronic device applications. The electron emission current of CNTs was well switched with a low voltage with MOSFET. We analyze switching properties of CNT emitters. For 500 μ;A emission current switching, the electron emitter shows saturation current region between 1,300 V to 2,100 V anode bias. The emitter keeps constant electron emission current between that 800 V region with 0.02 % variation.",

author = "Bae, {Woo Mi} and Bae, {Na Young} and Oh, {Hey Mi} and Lee, {Eun Hye} and Ha, {An Na} and Jin Jang and Park, {Kyu Chang}",

year = "2010",

language = "English",

pages = "1615--1618",

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TY - CONF

T1 - Switching property of carbon nanotube emitters with MOSFET

AU - Bae, Woo Mi

AU - Bae, Na Young

AU - Oh, Hey Mi

AU - Lee, Eun Hye

AU - Ha, An Na

AU - Jang, Jin

AU - Park, Kyu Chang

PY - 2010

Y1 - 2010

N2 - The switching control of electron emission of carbon nanotubes emitters is required for various vacuum nanoelectronic device applications. The electron emission current of CNTs was well switched with a low voltage with MOSFET. We analyze switching properties of CNT emitters. For 500 μ;A emission current switching, the electron emitter shows saturation current region between 1,300 V to 2,100 V anode bias. The emitter keeps constant electron emission current between that 800 V region with 0.02 % variation.

AB - The switching control of electron emission of carbon nanotubes emitters is required for various vacuum nanoelectronic device applications. The electron emission current of CNTs was well switched with a low voltage with MOSFET. We analyze switching properties of CNT emitters. For 500 μ;A emission current switching, the electron emitter shows saturation current region between 1,300 V to 2,100 V anode bias. The emitter keeps constant electron emission current between that 800 V region with 0.02 % variation.

UR - http://www.scopus.com/inward/record.url?scp=79956323238&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79956323238

SP - 1615

EP - 1618

T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

Switching property of carbon nanotube emitters with MOSFET

Abstract

Conference

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