Abstract
We have studied the electrical stability of the ink-jet printed 6, 13- bis (triisopropylsilylethynyl) pentacene thin film transistors (TIPS -pentacene TFT) with ink-jet printed Ag source /drain electrodes. We have measured the gate bias effect in dark, and the gate bias effect under light illumination on TFT performance. We found the big change in the transfer characteristics after the TFT is positively gate biased under illumination. The results are discussed with the carrier trappings at the interface and in the bulk.
| Original language | English |
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| Pages | 747-750 |
| Number of pages | 4 |
| Publication status | Published - 2010 |
| Event | 17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 1 Dec 2010 → 3 Dec 2010 |
Conference
| Conference | 17th International Display Workshops, IDW'10 |
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| Country/Territory | Japan |
| City | Fukuoka |
| Period | 1/12/10 → 3/12/10 |