Synergistic effect of light illumination and bias-stress on threshold voltage shift of ink-jet printed tips-pentacene thin-film transistor

Tae Ha Hwang; Sun Hee Lee; Sung Hoon Kim; Min Hee Choi; Jin Jang

Synergistic effect of light illumination and bias-stress on threshold voltage shift of ink-jet printed tips-pentacene thin-film transistor

Tae Ha Hwang
, Sun Hee Lee
, Sung Hoon Kim
, Min Hee Choi
, Jin Jang

Research output: Contribution to conference › Paper › peer-review

Abstract

We have studied the electrical stability of the ink-jet printed 6, 13- bis (triisopropylsilylethynyl) pentacene thin film transistors (TIPS -pentacene TFT) with ink-jet printed Ag source /drain electrodes. We have measured the gate bias effect in dark, and the gate bias effect under light illumination on TFT performance. We found the big change in the transfer characteristics after the TFT is positively gate biased under illumination. The results are discussed with the carrier trappings at the interface and in the bulk.

Original language	English
Pages	747-750
Number of pages	4
Publication status	Published - 2010
Event	17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 1 Dec 2010 → 3 Dec 2010

Conference

Conference	17th International Display Workshops, IDW'10
Country/Territory	Japan
City	Fukuoka
Period	1/12/10 → 3/12/10

Cite this

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title = "Synergistic effect of light illumination and bias-stress on threshold voltage shift of ink-jet printed tips-pentacene thin-film transistor",

abstract = "We have studied the electrical stability of the ink-jet printed 6, 13- bis (triisopropylsilylethynyl) pentacene thin film transistors (TIPS -pentacene TFT) with ink-jet printed Ag source /drain electrodes. We have measured the gate bias effect in dark, and the gate bias effect under light illumination on TFT performance. We found the big change in the transfer characteristics after the TFT is positively gate biased under illumination. The results are discussed with the carrier trappings at the interface and in the bulk.",

author = "Hwang, \{Tae Ha\} and Lee, \{Sun Hee\} and Kim, \{Sung Hoon\} and Choi, \{Min Hee\} and Jin Jang",

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TY - CONF

T1 - Synergistic effect of light illumination and bias-stress on threshold voltage shift of ink-jet printed tips-pentacene thin-film transistor

AU - Hwang, Tae Ha

AU - Lee, Sun Hee

AU - Kim, Sung Hoon

AU - Choi, Min Hee

AU - Jang, Jin

PY - 2010

Y1 - 2010

N2 - We have studied the electrical stability of the ink-jet printed 6, 13- bis (triisopropylsilylethynyl) pentacene thin film transistors (TIPS -pentacene TFT) with ink-jet printed Ag source /drain electrodes. We have measured the gate bias effect in dark, and the gate bias effect under light illumination on TFT performance. We found the big change in the transfer characteristics after the TFT is positively gate biased under illumination. The results are discussed with the carrier trappings at the interface and in the bulk.

AB - We have studied the electrical stability of the ink-jet printed 6, 13- bis (triisopropylsilylethynyl) pentacene thin film transistors (TIPS -pentacene TFT) with ink-jet printed Ag source /drain electrodes. We have measured the gate bias effect in dark, and the gate bias effect under light illumination on TFT performance. We found the big change in the transfer characteristics after the TFT is positively gate biased under illumination. The results are discussed with the carrier trappings at the interface and in the bulk.

UR - https://www.scopus.com/pages/publications/79956305931

M3 - Paper

AN - SCOPUS:79956305931

SP - 747

EP - 750

T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

Synergistic effect of light illumination and bias-stress on threshold voltage shift of ink-jet printed tips-pentacene thin-film transistor

Abstract

Conference

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