@inproceedings{c325102165aa483abade407ceab49626,
title = "Systematic global calibration of a process simulator",
abstract = "This paper proposes a novel methodology of systematic global calibration of a process simulator and validates its accuracy and efficiency with application to memory and logic devices. With 175 SIMS profiles which cover the whole range of conditions of implant and diffusion processes in the fabrication lines, the dominant diffusion phenomenon in each process temperature region has been determined. Using the dual-Pearson implant model and the fully-coupled diffusion model, the calibration was performed systematically. We applied the globally calibrated process simulation parameters to memory and logic devices to predict the optimum process conditions for target device characteristics.",
keywords = "Calibration, Diffusion, Implantation, Process Simulation, Silicidation",
author = "Lee, {Jun Ha} and Kim, {Kwan Do} and Kong, {Jeong Taek} and Lee, {Seung Woo} and Kim, {Young Wug} and Baek, {Doo Heun}",
note = "Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 ; Conference date: 27-03-2000 Through 29-03-2000",
year = "2000",
language = "English",
isbn = "0966613570",
series = "2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000",
pages = "52--55",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000",
}