TEMPERATURE AND LIGHT INTENSITY DEPENDENCES OF OPEN CIRCUIT VOLTAGE IN a-Si:H PIN SOLAR CELLS.

Jin Jang, Choochon Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Citations (Scopus)

Abstract

The temperature and incident light intensity dependences of open circuit voltage for hetero- and homojunction a-Si:H pin solar cells have been studied. The temperature coefficient of the open circuit voltage decreases from minus 2. 40 to minus 2. 67 mV/ degree C as the illumination intensity is decreased from 150 to 7 mW/cm**2. This is consistent with the empirically calculated open circuit voltages. The diode quality factor obtained under dark condition shows high values (1. 6-3. 0) and strong temperature dependence. On the other hand, the diode quality factor under illumination is less than 1. 5 and shows slight temperature dependence. The results appear to be due to the long dielectric relaxation time compared with the carrier lifetime in the i-layer.

Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages543-548
Number of pages6
ISBN (Print)0931837367, 9780931837364
DOIs
Publication statusPublished - 1986

Publication series

NameMaterials Research Society Symposia Proceedings
Volume70
ISSN (Print)0272-9172

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