TEMPERATURE AND LIGHT INTENSITY DEPENDENCES OF OPEN CIRCUIT VOLTAGE IN a-Si:H PIN SOLAR CELLS.

Jin Jang; Choochon Lee

doi:10.1557/proc-70-543

TEMPERATURE AND LIGHT INTENSITY DEPENDENCES OF OPEN CIRCUIT VOLTAGE IN a-Si:H PIN SOLAR CELLS.

Jin Jang, Choochon Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Citations (Scopus)

Abstract

The temperature and incident light intensity dependences of open circuit voltage for hetero- and homojunction a-Si:H pin solar cells have been studied. The temperature coefficient of the open circuit voltage decreases from minus 2. 40 to minus 2. 67 mV/ degree C as the illumination intensity is decreased from 150 to 7 mW/cm**2. This is consistent with the empirically calculated open circuit voltages. The diode quality factor obtained under dark condition shows high values (1. 6-3. 0) and strong temperature dependence. On the other hand, the diode quality factor under illumination is less than 1. 5 and shows slight temperature dependence. The results appear to be due to the long dielectric relaxation time compared with the carrier lifetime in the i-layer.

Original language	English
Title of host publication	Materials Research Society Symposia Proceedings
Publisher	Materials Research Soc
Pages	543-548
Number of pages	6
ISBN (Print)	0931837367, 9780931837364
DOIs	https://doi.org/10.1557/proc-70-543
Publication status	Published - 1986

Publication series

Name	Materials Research Society Symposia Proceedings
Volume	70
ISSN (Print)	0272-9172

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title = "TEMPERATURE AND LIGHT INTENSITY DEPENDENCES OF OPEN CIRCUIT VOLTAGE IN a-Si:H PIN SOLAR CELLS.",

abstract = "The temperature and incident light intensity dependences of open circuit voltage for hetero- and homojunction a-Si:H pin solar cells have been studied. The temperature coefficient of the open circuit voltage decreases from minus 2. 40 to minus 2. 67 mV/ degree C as the illumination intensity is decreased from 150 to 7 mW/cm**2. This is consistent with the empirically calculated open circuit voltages. The diode quality factor obtained under dark condition shows high values (1. 6-3. 0) and strong temperature dependence. On the other hand, the diode quality factor under illumination is less than 1. 5 and shows slight temperature dependence. The results appear to be due to the long dielectric relaxation time compared with the carrier lifetime in the i-layer.",

author = "Jin Jang and Choochon Lee",

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doi = "10.1557/proc-70-543",

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TEMPERATURE AND LIGHT INTENSITY DEPENDENCES OF OPEN CIRCUIT VOLTAGE IN a-Si:H PIN SOLAR CELLS. / Jang, Jin; Lee, Choochon.

Materials Research Society Symposia Proceedings. Materials Research Soc, 1986. p. 543-548 (Materials Research Society Symposia Proceedings; Vol. 70).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lee, Choochon

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N2 - The temperature and incident light intensity dependences of open circuit voltage for hetero- and homojunction a-Si:H pin solar cells have been studied. The temperature coefficient of the open circuit voltage decreases from minus 2. 40 to minus 2. 67 mV/ degree C as the illumination intensity is decreased from 150 to 7 mW/cm**2. This is consistent with the empirically calculated open circuit voltages. The diode quality factor obtained under dark condition shows high values (1. 6-3. 0) and strong temperature dependence. On the other hand, the diode quality factor under illumination is less than 1. 5 and shows slight temperature dependence. The results appear to be due to the long dielectric relaxation time compared with the carrier lifetime in the i-layer.

AB - The temperature and incident light intensity dependences of open circuit voltage for hetero- and homojunction a-Si:H pin solar cells have been studied. The temperature coefficient of the open circuit voltage decreases from minus 2. 40 to minus 2. 67 mV/ degree C as the illumination intensity is decreased from 150 to 7 mW/cm**2. This is consistent with the empirically calculated open circuit voltages. The diode quality factor obtained under dark condition shows high values (1. 6-3. 0) and strong temperature dependence. On the other hand, the diode quality factor under illumination is less than 1. 5 and shows slight temperature dependence. The results appear to be due to the long dielectric relaxation time compared with the carrier lifetime in the i-layer.

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TEMPERATURE AND LIGHT INTENSITY DEPENDENCES OF OPEN CIRCUIT VOLTAGE IN a-Si:H PIN SOLAR CELLS.

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