@inproceedings{77870bdd613040379d4beb434c9bd842,
title = "Temperature dependence of the dielectric response of AlSb",
abstract = "Spectroscopic ellipometry was used to determine the optical response of an intrinsic AlSb film as a function of temperature. The 1.5 μm thick film was grown on a (001) GaAs substrate by molecular beam epitaxy. Measurements were done at temperatures from 300 K to the growth temperature of 800 K over a spectral range of 0.7 to 5.0 eV. To avoid oxidation artifacts, measurements were done with the film in situ. The data were analyzed using a parametric semiconductor model for its temperature dependence.",
keywords = "AlSb, ellipsometry, in-situ, optical property, temperature dependence",
author = "Jung, {Y. W.} and Kim, {T. J.} and Kim, {Y. D.} and Shin, {S. H.} and Kim, {S. Y.} and Song, {J. D.}",
note = "Copyright: Copyright 2012 Elsevier B.V., All rights reserved.; 30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
year = "2011",
doi = "10.1063/1.3666246",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "37--38",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
}