Temperature-dependent carrier recombination processes in nanocrystalline Si/SiO2 multilayers studied by continuous-wave and time-resolved photoluminescence

Sung Kim; Yong Min Park; Suk Ho Choi; Kyung Joong Kim; Dong Hoon Choi

doi:10.1088/0022-3727/40/5/005

Temperature-dependent carrier recombination processes in nanocrystalline Si/SiO₂ multilayers studied by continuous-wave and time-resolved photoluminescence

Sung Kim, Yong Min Park, Suk Ho Choi, Kyung Joong Kim, Dong Hoon Choi

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12 Citations (Scopus)

Abstract

50-period SiO₂/SiO_x layers have been prepared on Si wafers by ion beam sputtering deposition and subsequently annealed to form Si nanocrystals (NCs) in the SiO_x layer. The integrated photoluminescence (PL) intensity of the samples with x ≤ 1.6 increases on decreasing the temperature down to a certain temperature named as T_C, but below T_C, it decreases. T_C is maintained at 95 K, almost irrespective of x. The rate of decrease of the PL below T_C gets slower as x increases up to 1.6, and at x ≤ 1.8, the PL intensity shows a monotonic increase with decreasing temperature. This phenomenon is strongly related to the change in the temperature dependence of the PL decay rate at around T_C as x varies. These results can be explained by the fact that the PL behaviours are increasingly influenced by the NCs' environment such as the defect states of the Si NCs/SiO₂ interfaces as x increases.

Original language	English
Article number	005
Pages (from-to)	1339-1342
Number of pages	4
Journal	Journal Physics D: Applied Physics
Volume	40
Issue number	5
DOIs	https://doi.org/10.1088/0022-3727/40/5/005
Publication status	Published - 7 Mar 2007

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title = "Temperature-dependent carrier recombination processes in nanocrystalline Si/SiO2 multilayers studied by continuous-wave and time-resolved photoluminescence",

abstract = "50-period SiO2/SiOx layers have been prepared on Si wafers by ion beam sputtering deposition and subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. The integrated photoluminescence (PL) intensity of the samples with x ≤ 1.6 increases on decreasing the temperature down to a certain temperature named as TC, but below TC, it decreases. TC is maintained at 95 K, almost irrespective of x. The rate of decrease of the PL below TC gets slower as x increases up to 1.6, and at x ≤ 1.8, the PL intensity shows a monotonic increase with decreasing temperature. This phenomenon is strongly related to the change in the temperature dependence of the PL decay rate at around TC as x varies. These results can be explained by the fact that the PL behaviours are increasingly influenced by the NCs' environment such as the defect states of the Si NCs/SiO2 interfaces as x increases.",

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AU - Kim, Sung

AU - Min Park, Yong

AU - Choi, Suk Ho

AU - Joong Kim, Kyung

AU - Hoon Choi, Dong

PY - 2007/3/7

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N2 - 50-period SiO2/SiOx layers have been prepared on Si wafers by ion beam sputtering deposition and subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. The integrated photoluminescence (PL) intensity of the samples with x ≤ 1.6 increases on decreasing the temperature down to a certain temperature named as TC, but below TC, it decreases. TC is maintained at 95 K, almost irrespective of x. The rate of decrease of the PL below TC gets slower as x increases up to 1.6, and at x ≤ 1.8, the PL intensity shows a monotonic increase with decreasing temperature. This phenomenon is strongly related to the change in the temperature dependence of the PL decay rate at around TC as x varies. These results can be explained by the fact that the PL behaviours are increasingly influenced by the NCs' environment such as the defect states of the Si NCs/SiO2 interfaces as x increases.

AB - 50-period SiO2/SiOx layers have been prepared on Si wafers by ion beam sputtering deposition and subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. The integrated photoluminescence (PL) intensity of the samples with x ≤ 1.6 increases on decreasing the temperature down to a certain temperature named as TC, but below TC, it decreases. TC is maintained at 95 K, almost irrespective of x. The rate of decrease of the PL below TC gets slower as x increases up to 1.6, and at x ≤ 1.8, the PL intensity shows a monotonic increase with decreasing temperature. This phenomenon is strongly related to the change in the temperature dependence of the PL decay rate at around TC as x varies. These results can be explained by the fact that the PL behaviours are increasingly influenced by the NCs' environment such as the defect states of the Si NCs/SiO2 interfaces as x increases.

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Temperature-dependent carrier recombination processes in nanocrystalline Si/SiO₂ multilayers studied by continuous-wave and time-resolved photoluminescence

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