Temperature dependent electrical properties in ITO/TPD/Alq3/Al organic light-emitting diodes

Sang Keol Kim; Dong Hoe Chung; Ho Sik Lee; Hyun Nam Cho; Jong Wook Park; Jin Woong Hong; Tae Wan Kim

doi:10.1016/S0379-6779(02)00895-0

Temperature dependent electrical properties in ITO/TPD/Alq₃/Al organic light-emitting diodes

Sang Keol Kim, Dong Hoe Chung, Ho Sik Lee, Hyun Nam Cho, Jong Wook Park, Jin Woong Hong, Tae Wan Kim

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

Temperature dependence of current-voltage-luminance characteristics in organic light-emitting diodes are studied in a device structure of ITO/TPD/Alq₃Al to understand an electrical conduction mechanism. The current-voltage-luminance characteristics are measured in the temperature range of 8K-300K, and analyzed them using a hopping model with exponential trap distribution and Fowler-Nordheim tunneling. At low temperatures below 150K, the Fowler-Nordheim tunneling conduction mechanism is dominant And we have obtained a zero field barrier height to be about 0.6-0.8eV.

Original language	English
Pages (from-to)	1041-1042
Number of pages	2
Journal	Synthetic Metals
Volume	137
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(02)00895-0
Publication status	Published - 4 Apr 2003
Event	ICSM 2002 - Shanghai, China Duration: 29 Jun 2002 → 5 Jul 2002

Keywords

Conduction mechanism
Fowler-Nordheim tunneling
Hopping model
Organic light-emitting diodes

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10.1016/S0379-6779(02)00895-0

Cite this

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title = "Temperature dependent electrical properties in ITO/TPD/Alq3/Al organic light-emitting diodes",

abstract = "Temperature dependence of current-voltage-luminance characteristics in organic light-emitting diodes are studied in a device structure of ITO/TPD/Alq3Al to understand an electrical conduction mechanism. The current-voltage-luminance characteristics are measured in the temperature range of 8K-300K, and analyzed them using a hopping model with exponential trap distribution and Fowler-Nordheim tunneling. At low temperatures below 150K, the Fowler-Nordheim tunneling conduction mechanism is dominant And we have obtained a zero field barrier height to be about 0.6-0.8eV.",

keywords = "Conduction mechanism, Fowler-Nordheim tunneling, Hopping model, Organic light-emitting diodes",

author = "Kim, {Sang Keol} and Chung, {Dong Hoe} and Lee, {Ho Sik} and Cho, {Hyun Nam} and Park, {Jong Wook} and Hong, {Jin Woong} and Kim, {Tae Wan}",

year = "2003",

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doi = "10.1016/S0379-6779(02)00895-0",

language = "English",

volume = "137",

pages = "1041--1042",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier B.V.",

number = "1-3",

note = "ICSM 2002 ; Conference date: 29-06-2002 Through 05-07-2002",

}

TY - JOUR

T1 - Temperature dependent electrical properties in ITO/TPD/Alq3/Al organic light-emitting diodes

AU - Kim, Sang Keol

AU - Chung, Dong Hoe

AU - Lee, Ho Sik

AU - Cho, Hyun Nam

AU - Park, Jong Wook

AU - Hong, Jin Woong

AU - Kim, Tae Wan

PY - 2003/4/4

Y1 - 2003/4/4

N2 - Temperature dependence of current-voltage-luminance characteristics in organic light-emitting diodes are studied in a device structure of ITO/TPD/Alq3Al to understand an electrical conduction mechanism. The current-voltage-luminance characteristics are measured in the temperature range of 8K-300K, and analyzed them using a hopping model with exponential trap distribution and Fowler-Nordheim tunneling. At low temperatures below 150K, the Fowler-Nordheim tunneling conduction mechanism is dominant And we have obtained a zero field barrier height to be about 0.6-0.8eV.

AB - Temperature dependence of current-voltage-luminance characteristics in organic light-emitting diodes are studied in a device structure of ITO/TPD/Alq3Al to understand an electrical conduction mechanism. The current-voltage-luminance characteristics are measured in the temperature range of 8K-300K, and analyzed them using a hopping model with exponential trap distribution and Fowler-Nordheim tunneling. At low temperatures below 150K, the Fowler-Nordheim tunneling conduction mechanism is dominant And we have obtained a zero field barrier height to be about 0.6-0.8eV.

KW - Conduction mechanism

KW - Fowler-Nordheim tunneling

KW - Hopping model

KW - Organic light-emitting diodes

UR - http://www.scopus.com/inward/record.url?scp=0037419379&partnerID=8YFLogxK

U2 - 10.1016/S0379-6779(02)00895-0

DO - 10.1016/S0379-6779(02)00895-0

M3 - Conference article

AN - SCOPUS:0037419379

SN - 0379-6779

VL - 137

SP - 1041

EP - 1042

JO - Synthetic Metals

JF - Synthetic Metals

IS - 1-3

T2 - ICSM 2002

Y2 - 29 June 2002 through 5 July 2002

ER -

Temperature dependent electrical properties in ITO/TPD/Alq₃/Al organic light-emitting diodes

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Keywords

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