Temperature dependent field effect conductance in a-Si:H

Jin Jang, Choochon Lee

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The temperature dependence of field effect conductance for glow dischraged a-Si:H films has been measured. The conductance measured with a fixed field voltage can be described as activated form with temperature. The density of states in the gap is decreased by adding observed Meyer-Neldel term to the conductance and the effect becomes larger as the energy is approached to the band edges. The determined mobility gap of a typical a-Si0.89H0.11 film is 1.74 eV from temperature dependence of field effect conductance.

Original languageEnglish
Pages (from-to)281-284
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume59-60
Issue numberPART 1
DOIs
Publication statusPublished - Dec 1983

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