Temperature-dependent negative photoconductivity of undoped ZnO films

Hye Ryong Kim; Sung Kim; Chang Oh Kim; Suk Ho Choi

doi:10.1016/j.tsf.2009.06.049

Temperature-dependent negative photoconductivity of undoped ZnO films

Hye Ryong Kim, Sung Kim, Chang Oh Kim, Suk Ho Choi

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Undoped ZnO films of 100 nm thickness have been deposited on p-type Si (100) substrates at room temperature by radio-frequency magnetron sputtering and subsequently annealed in a rapid thermal annealing apparatus under a nitrogen ambient by varying annealing temperature (T_A) from 973 to 1273 K in steps of 100 K for 3 min. Photoconductivity spectra in the UV and visible ranges are measured as a function of T_A in the range of measurement temperatures (T) from 80 to 350 K under an applied bias of 1 V. For the samples annealed at T_A = 973 and 1073 K, negative photoconductivity is observed below T = 300 K, and its absolute magnitude increases as T_A increases. In contrast, the photoconductivity of the samples at T_A ≥ 1173 K is always positive, irrespective of T, and its magnitude increases as T_A increases. These PC behaviors are discussed based on the defect states at the grain boundaries of the ZnO films.

Original language	English
Pages (from-to)	305-308
Number of pages	4
Journal	Thin Solid Films
Volume	518
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2009.06.049
Publication status	Published - 2 Nov 2009

Bibliographical note

Funding Information:
This work was supported by a grant from the Kyung Hee University in 2009. (KHU-20090754) H. R. Kim acknowledges a support from the Kyung Hee University Graduate School Scholarship for Outstanding Research Papers in 2nd semester, 2008.

Keywords

Defect states
Grain boundary
Negative photoconductivity
Scanning Electron Microscopy
Sputtering
Zinc oxide

Access to Document

10.1016/j.tsf.2009.06.049

Cite this

@article{3a20802b474f4de7bddd11e868923c76,

title = "Temperature-dependent negative photoconductivity of undoped ZnO films",

abstract = "Undoped ZnO films of 100 nm thickness have been deposited on p-type Si (100) substrates at room temperature by radio-frequency magnetron sputtering and subsequently annealed in a rapid thermal annealing apparatus under a nitrogen ambient by varying annealing temperature (TA) from 973 to 1273 K in steps of 100 K for 3 min. Photoconductivity spectra in the UV and visible ranges are measured as a function of TA in the range of measurement temperatures (T) from 80 to 350 K under an applied bias of 1 V. For the samples annealed at TA = 973 and 1073 K, negative photoconductivity is observed below T = 300 K, and its absolute magnitude increases as TA increases. In contrast, the photoconductivity of the samples at TA ≥ 1173 K is always positive, irrespective of T, and its magnitude increases as TA increases. These PC behaviors are discussed based on the defect states at the grain boundaries of the ZnO films.",

keywords = "Defect states, Grain boundary, Negative photoconductivity, Scanning Electron Microscopy, Sputtering, Zinc oxide",

author = "Kim, {Hye Ryong} and Sung Kim and Kim, {Chang Oh} and Choi, {Suk Ho}",

note = "Funding Information: This work was supported by a grant from the Kyung Hee University in 2009. (KHU-20090754) H. R. Kim acknowledges a support from the Kyung Hee University Graduate School Scholarship for Outstanding Research Papers in 2nd semester, 2008.",

year = "2009",

month = nov,

day = "2",

doi = "10.1016/j.tsf.2009.06.049",

language = "English",

volume = "518",

pages = "305--308",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Temperature-dependent negative photoconductivity of undoped ZnO films

AU - Kim, Hye Ryong

AU - Kim, Sung

AU - Kim, Chang Oh

AU - Choi, Suk Ho

N1 - Funding Information: This work was supported by a grant from the Kyung Hee University in 2009. (KHU-20090754) H. R. Kim acknowledges a support from the Kyung Hee University Graduate School Scholarship for Outstanding Research Papers in 2nd semester, 2008.

PY - 2009/11/2

Y1 - 2009/11/2

N2 - Undoped ZnO films of 100 nm thickness have been deposited on p-type Si (100) substrates at room temperature by radio-frequency magnetron sputtering and subsequently annealed in a rapid thermal annealing apparatus under a nitrogen ambient by varying annealing temperature (TA) from 973 to 1273 K in steps of 100 K for 3 min. Photoconductivity spectra in the UV and visible ranges are measured as a function of TA in the range of measurement temperatures (T) from 80 to 350 K under an applied bias of 1 V. For the samples annealed at TA = 973 and 1073 K, negative photoconductivity is observed below T = 300 K, and its absolute magnitude increases as TA increases. In contrast, the photoconductivity of the samples at TA ≥ 1173 K is always positive, irrespective of T, and its magnitude increases as TA increases. These PC behaviors are discussed based on the defect states at the grain boundaries of the ZnO films.

AB - Undoped ZnO films of 100 nm thickness have been deposited on p-type Si (100) substrates at room temperature by radio-frequency magnetron sputtering and subsequently annealed in a rapid thermal annealing apparatus under a nitrogen ambient by varying annealing temperature (TA) from 973 to 1273 K in steps of 100 K for 3 min. Photoconductivity spectra in the UV and visible ranges are measured as a function of TA in the range of measurement temperatures (T) from 80 to 350 K under an applied bias of 1 V. For the samples annealed at TA = 973 and 1073 K, negative photoconductivity is observed below T = 300 K, and its absolute magnitude increases as TA increases. In contrast, the photoconductivity of the samples at TA ≥ 1173 K is always positive, irrespective of T, and its magnitude increases as TA increases. These PC behaviors are discussed based on the defect states at the grain boundaries of the ZnO films.

KW - Defect states

KW - Grain boundary

KW - Negative photoconductivity

KW - Scanning Electron Microscopy

KW - Sputtering

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=69549084676&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.06.049

DO - 10.1016/j.tsf.2009.06.049

M3 - Article

AN - SCOPUS:69549084676

SN - 0040-6090

VL - 518

SP - 305

EP - 308

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Temperature-dependent negative photoconductivity of undoped ZnO films

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this