@inproceedings{d2e378b3fa654a5ebf30153220817534,
title = "TFT technologies for large area electronics",
abstract = "The TFT technologies developed at ADRC on amorphous silicon (a-Si), polycrystalline silicon (poly-Si) and organic semiconductor are summarized. The a-Si TFT was used for visible light detection as well as switching devices of AMLCD. As a result, the AMLCDs with imbedded sensor or imbedded backlight control sensor were developed. Poly-Si is used for mobile applications with smart design and integrated circuits. We developed a new CW laser crystallization for the super-grain poly-Si and disk-shaped grain growth using a Ni mediated solid phase crystallization. The organic TFT was developed with a self-organized process and printable TFT was fabricated for the low-cost array on plastic.",
author = "Jin Jang",
year = "2007",
doi = "10.1149/1.2767284",
language = "English",
isbn = "9781604238921",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "39--43",
booktitle = "ECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT",
edition = "1",
note = "2007 International Conference on SemiconductorTechnology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT ; Conference date: 29-07-2007 Through 03-08-2007",
}