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The dependence of the electron carrier occupation in the subband on the as mole fraction in modulation-doped InAsxP1-x/InP strained single quantum wells

  • T. W. Kim
  • , M. Jung
  • , D. U. Lee
  • , J. H. Kim
  • , K. H. Yoo

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

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