The effect of Mg and Si impurities on the optical property of InGaN-light emitting diode

Eun Hyun Park; Jin Jang

doi:10.1117/12.829445

The effect of Mg and Si impurities on the optical property of InGaN-light emitting diode

Eun Hyun Park, Jin Jang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Although Si and Mg impurities are essential elements for n and p type GaN, unintentional incorporation into InGaN-multiple quantum wells (MQWs) seriously affects the optical property of LEDs. Si doping in MQWs obstructs the hole carrier transport and induces the dead quantum wells (QWs) of MQWs. Also, Mg impurity diffusion from p- GaN into MQWs degrades the radiative recombination rate of the QWs placed near Mg doped p-GaN layer. In this paper, the effects of Si and Mg impurities on the optical property were systematically investigated.

Original language	English
Title of host publication	Ninth International Conference on Solid State Lighting
DOIs	https://doi.org/10.1117/12.829445
Publication status	Published - 2009
Event	9th International Conference on Solid State Lighting - San Diego, CA, United States Duration: 3 Aug 2009 → 5 Aug 2009

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7422
ISSN (Print)	0277-786X

Conference

Conference	9th International Conference on Solid State Lighting
Country/Territory	United States
City	San Diego, CA
Period	3/08/09 → 5/08/09

Keywords

Carrier transport
Diffusion
GaN
Internal quantum efficiency
LED
Mg doping
Silicon doping

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10.1117/12.829445

Cite this

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title = "The effect of Mg and Si impurities on the optical property of InGaN-light emitting diode",

abstract = "Although Si and Mg impurities are essential elements for n and p type GaN, unintentional incorporation into InGaN-multiple quantum wells (MQWs) seriously affects the optical property of LEDs. Si doping in MQWs obstructs the hole carrier transport and induces the dead quantum wells (QWs) of MQWs. Also, Mg impurity diffusion from p- GaN into MQWs degrades the radiative recombination rate of the QWs placed near Mg doped p-GaN layer. In this paper, the effects of Si and Mg impurities on the optical property were systematically investigated.",

keywords = "Carrier transport, Diffusion, GaN, Internal quantum efficiency, LED, Mg doping, Silicon doping",

author = "Park, {Eun Hyun} and Jin Jang",

year = "2009",

doi = "10.1117/12.829445",

language = "English",

isbn = "9780819477125",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Ninth International Conference on Solid State Lighting",

}

Park, EH & Jang, J 2009, The effect of Mg and Si impurities on the optical property of InGaN-light emitting diode. in Ninth International Conference on Solid State Lighting., 742203, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7422, 9th International Conference on Solid State Lighting, San Diego, CA, United States, 3/08/09. https://doi.org/10.1117/12.829445

The effect of Mg and Si impurities on the optical property of InGaN-light emitting diode. / Park, Eun Hyun; Jang, Jin.
Ninth International Conference on Solid State Lighting. 2009. 742203 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7422).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The effect of Mg and Si impurities on the optical property of InGaN-light emitting diode

AU - Park, Eun Hyun

AU - Jang, Jin

PY - 2009

Y1 - 2009

N2 - Although Si and Mg impurities are essential elements for n and p type GaN, unintentional incorporation into InGaN-multiple quantum wells (MQWs) seriously affects the optical property of LEDs. Si doping in MQWs obstructs the hole carrier transport and induces the dead quantum wells (QWs) of MQWs. Also, Mg impurity diffusion from p- GaN into MQWs degrades the radiative recombination rate of the QWs placed near Mg doped p-GaN layer. In this paper, the effects of Si and Mg impurities on the optical property were systematically investigated.

AB - Although Si and Mg impurities are essential elements for n and p type GaN, unintentional incorporation into InGaN-multiple quantum wells (MQWs) seriously affects the optical property of LEDs. Si doping in MQWs obstructs the hole carrier transport and induces the dead quantum wells (QWs) of MQWs. Also, Mg impurity diffusion from p- GaN into MQWs degrades the radiative recombination rate of the QWs placed near Mg doped p-GaN layer. In this paper, the effects of Si and Mg impurities on the optical property were systematically investigated.

KW - Carrier transport

KW - Diffusion

KW - GaN

KW - Internal quantum efficiency

KW - LED

KW - Mg doping

KW - Silicon doping

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DO - 10.1117/12.829445

M3 - Conference contribution

AN - SCOPUS:70349909327

SN - 9780819477125

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Ninth International Conference on Solid State Lighting

T2 - 9th International Conference on Solid State Lighting

Y2 - 3 August 2009 through 5 August 2009

ER -

The effect of Mg and Si impurities on the optical property of InGaN-light emitting diode

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