The effect of Sr concentration on resistive switching properties of La 1-xSrxMnO3 films

Sun Gyu Choi; Hong Sub Lee; Hyejung Choi; Sung Woong Chung; Hyung Ho Park

doi:10.1016/j.tsf.2012.07.069

The effect of Sr concentration on resistive switching properties of La _1-xSr_xMnO₃ films

Sun Gyu Choi
, Hong Sub Lee
, Hyejung Choi
, Sung Woong Chung
, Hyung Ho Park

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

La_{1 - x}Sr_xMnO₃ (LSMO, x = 0.1, 0.3, and 0.5) thin films were prepared on Pt/Ti/SiO₂/Si substrates using a radio frequency magnetron sputtering technique at a substrate temperature of 450 C. The effects of Sr contents on the physical, chemical, and electrical properties of films were systematically investigated. X-ray diffraction results showed that the growth orientation and crystallinity of films were affected by Sr content. The Mn valence transition was analyzed using X-ray photoelectron spectroscopy. The conversion of Mn^{3 +} valence to Mn^{4 +} with increasing Sr^{2 +} concentration generated more Mn ^{3 +}-O^{2 -}-Mn^{4 +} bonds, and caused initial resistance change of LSMO films. The largest resistive switching of the La _0.7Sr_0.3MnO₃ film having a (110) plane preferred orientation is discussed.

Original language	English
Pages (from-to)	352-355
Number of pages	4
Journal	Thin Solid Films
Volume	529
DOIs	https://doi.org/10.1016/j.tsf.2012.07.069
Publication status	Published - 1 Feb 2013

Bibliographical note

Funding Information:
This work was supported by SK Hynix Inc. of Korea and by the second stage of the Brain Korea 21 project in 2011.

Keywords

GAXRD
LSMO
ReRAM
Resistance switching
Sr contents
XPS

Access to Document

10.1016/j.tsf.2012.07.069

Cite this

@article{19d0946dda124022af1dc9677619cf5d,

title = "The effect of Sr concentration on resistive switching properties of La 1-xSrxMnO3 films",

abstract = "La1 - xSrxMnO3 (LSMO, x = 0.1, 0.3, and 0.5) thin films were prepared on Pt/Ti/SiO2/Si substrates using a radio frequency magnetron sputtering technique at a substrate temperature of 450 C. The effects of Sr contents on the physical, chemical, and electrical properties of films were systematically investigated. X-ray diffraction results showed that the growth orientation and crystallinity of films were affected by Sr content. The Mn valence transition was analyzed using X-ray photoelectron spectroscopy. The conversion of Mn3 + valence to Mn4 + with increasing Sr2 + concentration generated more Mn 3 +-O2 --Mn4 + bonds, and caused initial resistance change of LSMO films. The largest resistive switching of the La 0.7Sr0.3MnO3 film having a (110) plane preferred orientation is discussed.",

keywords = "GAXRD, LSMO, ReRAM, Resistance switching, Sr contents, XPS",

author = "Choi, \{Sun Gyu\} and Lee, \{Hong Sub\} and Hyejung Choi and Chung, \{Sung Woong\} and Park, \{Hyung Ho\}",

note = "Funding Information: This work was supported by SK Hynix Inc. of Korea and by the second stage of the Brain Korea 21 project in 2011.",

year = "2013",

month = feb,

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doi = "10.1016/j.tsf.2012.07.069",

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journal = "Thin Solid Films",

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T1 - The effect of Sr concentration on resistive switching properties of La 1-xSrxMnO3 films

AU - Choi, Sun Gyu

AU - Lee, Hong Sub

AU - Choi, Hyejung

AU - Chung, Sung Woong

AU - Park, Hyung Ho

N1 - Funding Information: This work was supported by SK Hynix Inc. of Korea and by the second stage of the Brain Korea 21 project in 2011.

PY - 2013/2/1

Y1 - 2013/2/1

N2 - La1 - xSrxMnO3 (LSMO, x = 0.1, 0.3, and 0.5) thin films were prepared on Pt/Ti/SiO2/Si substrates using a radio frequency magnetron sputtering technique at a substrate temperature of 450 C. The effects of Sr contents on the physical, chemical, and electrical properties of films were systematically investigated. X-ray diffraction results showed that the growth orientation and crystallinity of films were affected by Sr content. The Mn valence transition was analyzed using X-ray photoelectron spectroscopy. The conversion of Mn3 + valence to Mn4 + with increasing Sr2 + concentration generated more Mn 3 +-O2 --Mn4 + bonds, and caused initial resistance change of LSMO films. The largest resistive switching of the La 0.7Sr0.3MnO3 film having a (110) plane preferred orientation is discussed.

AB - La1 - xSrxMnO3 (LSMO, x = 0.1, 0.3, and 0.5) thin films were prepared on Pt/Ti/SiO2/Si substrates using a radio frequency magnetron sputtering technique at a substrate temperature of 450 C. The effects of Sr contents on the physical, chemical, and electrical properties of films were systematically investigated. X-ray diffraction results showed that the growth orientation and crystallinity of films were affected by Sr content. The Mn valence transition was analyzed using X-ray photoelectron spectroscopy. The conversion of Mn3 + valence to Mn4 + with increasing Sr2 + concentration generated more Mn 3 +-O2 --Mn4 + bonds, and caused initial resistance change of LSMO films. The largest resistive switching of the La 0.7Sr0.3MnO3 film having a (110) plane preferred orientation is discussed.

KW - GAXRD

KW - LSMO

KW - ReRAM

KW - Resistance switching

KW - Sr contents

KW - XPS

UR - https://www.scopus.com/pages/publications/84873727459

U2 - 10.1016/j.tsf.2012.07.069

DO - 10.1016/j.tsf.2012.07.069

M3 - Article

AN - SCOPUS:84873727459

SN - 0040-6090

VL - 529

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EP - 355

JO - Thin Solid Films

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