The effect of surface treatment of bottom contact organic thin film transistor

Jin Seong Park; Woo Sik Jeon; Jung Soo Park; Jang Hyuk Kwon; Min Chul Suh

doi:10.1016/j.synthmet.2011.07.001

The effect of surface treatment of bottom contact organic thin film transistor

Jin Seong Park, Woo Sik Jeon, Jung Soo Park, Jang Hyuk Kwon, Min Chul Suh

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (GI) and pentacene. Poly(methyl methacrylate) (PMMA) and 2-mercapto 5-nitrobenzimidazole (MNB) layers are deposited on the gate insulator and source/drain gold (S/D, Au) electrode before depositing pentacene to investigate the device properties. The sequence of surface treatment significantly affects the device performance. The ultra-thin PMMA (less than 5 nm) was deposited on the organic gate insulator and S/D metal by the spin coating method, which caused no deterioration of the on-state current (I_on), although a bottom contact structure was exploited. The lack of increase in the contact resistance (R_c) may be due to the difference in wettability between PMMA/Au and PMMA/organic GI. As a result, the devices treated with PMMA → MNB showed much better I_on behavior than those fabricated with MNB → PMMA. We report on the difference in the physical and electrical performances associated with the surface treatment sequence.

Original language	English
Pages (from-to)	1953-1957
Number of pages	5
Journal	Synthetic Metals
Volume	161
Issue number	17-18
DOIs	https://doi.org/10.1016/j.synthmet.2011.07.001
Publication status	Published - Sept 2011

Bibliographical note

Funding Information:
Prof. J. S. Park acknowledges funding from the collaborative R&D program with technology advanced country “Development of materials and stacked device structure for next generation solar cells, 2010-advanced-B-105” by the Ministry of Knowledge and Economy . Prof. M. C. Suh gratefully acknowledges to Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. NRF-2011-0006847).

Keywords

Contact resistance
MNB
Organic thin film transistor (OTFT)
PMMA
Sequence of surface treatment
Wettability

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10.1016/j.synthmet.2011.07.001

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title = "The effect of surface treatment of bottom contact organic thin film transistor",

abstract = "A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (GI) and pentacene. Poly(methyl methacrylate) (PMMA) and 2-mercapto 5-nitrobenzimidazole (MNB) layers are deposited on the gate insulator and source/drain gold (S/D, Au) electrode before depositing pentacene to investigate the device properties. The sequence of surface treatment significantly affects the device performance. The ultra-thin PMMA (less than 5 nm) was deposited on the organic gate insulator and S/D metal by the spin coating method, which caused no deterioration of the on-state current (Ion), although a bottom contact structure was exploited. The lack of increase in the contact resistance (Rc) may be due to the difference in wettability between PMMA/Au and PMMA/organic GI. As a result, the devices treated with PMMA → MNB showed much better Ion behavior than those fabricated with MNB → PMMA. We report on the difference in the physical and electrical performances associated with the surface treatment sequence.",

keywords = "Contact resistance, MNB, Organic thin film transistor (OTFT), PMMA, Sequence of surface treatment, Wettability",

author = "Park, {Jin Seong} and Jeon, {Woo Sik} and Park, {Jung Soo} and Kwon, {Jang Hyuk} and Suh, {Min Chul}",

note = "Funding Information: Prof. J. S. Park acknowledges funding from the collaborative R&D program with technology advanced country “Development of materials and stacked device structure for next generation solar cells, 2010-advanced-B-105” by the Ministry of Knowledge and Economy . Prof. M. C. Suh gratefully acknowledges to Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. NRF-2011-0006847).",

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N2 - A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (GI) and pentacene. Poly(methyl methacrylate) (PMMA) and 2-mercapto 5-nitrobenzimidazole (MNB) layers are deposited on the gate insulator and source/drain gold (S/D, Au) electrode before depositing pentacene to investigate the device properties. The sequence of surface treatment significantly affects the device performance. The ultra-thin PMMA (less than 5 nm) was deposited on the organic gate insulator and S/D metal by the spin coating method, which caused no deterioration of the on-state current (Ion), although a bottom contact structure was exploited. The lack of increase in the contact resistance (Rc) may be due to the difference in wettability between PMMA/Au and PMMA/organic GI. As a result, the devices treated with PMMA → MNB showed much better Ion behavior than those fabricated with MNB → PMMA. We report on the difference in the physical and electrical performances associated with the surface treatment sequence.

AB - A bottom contact organic thin film transistor (OTFT) is fabricated with an organic double-layered gate insulator (GI) and pentacene. Poly(methyl methacrylate) (PMMA) and 2-mercapto 5-nitrobenzimidazole (MNB) layers are deposited on the gate insulator and source/drain gold (S/D, Au) electrode before depositing pentacene to investigate the device properties. The sequence of surface treatment significantly affects the device performance. The ultra-thin PMMA (less than 5 nm) was deposited on the organic gate insulator and S/D metal by the spin coating method, which caused no deterioration of the on-state current (Ion), although a bottom contact structure was exploited. The lack of increase in the contact resistance (Rc) may be due to the difference in wettability between PMMA/Au and PMMA/organic GI. As a result, the devices treated with PMMA → MNB showed much better Ion behavior than those fabricated with MNB → PMMA. We report on the difference in the physical and electrical performances associated with the surface treatment sequence.

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The effect of surface treatment of bottom contact organic thin film transistor

Abstract

Bibliographical note

Keywords

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