The evolution of the structure of quantum size effect Pb nanocrystals on Si(1 1 1) 7×7

R. Feng; E. H. Conrad; C. Kim; P. F. Miceli; M. C. Tringides

doi:10.1016/j.physb.2004.11.051

The evolution of the structure of quantum size effect Pb nanocrystals on Si(1 1 1) 7×7

R. Feng, E. H. Conrad, C. Kim, P. F. Miceli, M. C. Tringides

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We have carried out diffuse X-ray scattering measurements of the growth of Pb nanocrystalline islands on Si(1 1 1). Analysis of our data shows that islands growing on an initially rough wetting layer transforms the portion of the wetting layer below them into ordered fcc sites. Therefore, the islands grow directly on top of the Si surface with a disordered wetting layer occupying the region between the islands and, consequently, the island height responsible for the quantum well depth is one layer thicker than reported by LEED and STM. These islands have an extremely good vertical order until the islands coalesce into a closed film. At that point the disorder of the film increases consistent with misfit strain relaxation.

Original language	English
Pages (from-to)	175-179
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	357
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physb.2004.11.051
Publication status	Published - 28 Feb 2005

Bibliographical note

Funding Information:
The Advanced Photon Source is supported by DOE W-31-109-Eng-38 and the μCAT beam line is supported through the Ames Laboratory, which is operated for the US Department of Energy by Iowa State University under Contract No. W-7405-Eng-82. Research funding was supported, in part, by the Ames Laboratory (M. Tringides), Canim Scientific Group (E. Conrad), the Missouri University Research Board and the National Science Foundation DMR-0405742 (P.F. Miceli, C. Kim).

Keywords

Nanocrystals
Quantum size effect
Surface X-ray scattering

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10.1016/j.physb.2004.11.051

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title = "The evolution of the structure of quantum size effect Pb nanocrystals on Si(1 1 1) 7×7",

abstract = "We have carried out diffuse X-ray scattering measurements of the growth of Pb nanocrystalline islands on Si(1 1 1). Analysis of our data shows that islands growing on an initially rough wetting layer transforms the portion of the wetting layer below them into ordered fcc sites. Therefore, the islands grow directly on top of the Si surface with a disordered wetting layer occupying the region between the islands and, consequently, the island height responsible for the quantum well depth is one layer thicker than reported by LEED and STM. These islands have an extremely good vertical order until the islands coalesce into a closed film. At that point the disorder of the film increases consistent with misfit strain relaxation.",

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note = "Funding Information: The Advanced Photon Source is supported by DOE W-31-109-Eng-38 and the μCAT beam line is supported through the Ames Laboratory, which is operated for the US Department of Energy by Iowa State University under Contract No. W-7405-Eng-82. Research funding was supported, in part, by the Ames Laboratory (M. Tringides), Canim Scientific Group (E. Conrad), the Missouri University Research Board and the National Science Foundation DMR-0405742 (P.F. Miceli, C. Kim).",

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AU - Kim, C.

AU - Miceli, P. F.

AU - Tringides, M. C.

N1 - Funding Information: The Advanced Photon Source is supported by DOE W-31-109-Eng-38 and the μCAT beam line is supported through the Ames Laboratory, which is operated for the US Department of Energy by Iowa State University under Contract No. W-7405-Eng-82. Research funding was supported, in part, by the Ames Laboratory (M. Tringides), Canim Scientific Group (E. Conrad), the Missouri University Research Board and the National Science Foundation DMR-0405742 (P.F. Miceli, C. Kim).

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N2 - We have carried out diffuse X-ray scattering measurements of the growth of Pb nanocrystalline islands on Si(1 1 1). Analysis of our data shows that islands growing on an initially rough wetting layer transforms the portion of the wetting layer below them into ordered fcc sites. Therefore, the islands grow directly on top of the Si surface with a disordered wetting layer occupying the region between the islands and, consequently, the island height responsible for the quantum well depth is one layer thicker than reported by LEED and STM. These islands have an extremely good vertical order until the islands coalesce into a closed film. At that point the disorder of the film increases consistent with misfit strain relaxation.

AB - We have carried out diffuse X-ray scattering measurements of the growth of Pb nanocrystalline islands on Si(1 1 1). Analysis of our data shows that islands growing on an initially rough wetting layer transforms the portion of the wetting layer below them into ordered fcc sites. Therefore, the islands grow directly on top of the Si surface with a disordered wetting layer occupying the region between the islands and, consequently, the island height responsible for the quantum well depth is one layer thicker than reported by LEED and STM. These islands have an extremely good vertical order until the islands coalesce into a closed film. At that point the disorder of the film increases consistent with misfit strain relaxation.

KW - Nanocrystals

KW - Quantum size effect

KW - Surface X-ray scattering

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The evolution of the structure of quantum size effect Pb nanocrystals on Si(1 1 1) 7×7

Abstract

Bibliographical note

Keywords

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