Thermal equilibrium behavior in inhomogeneous, undoped amorphous silicon

Jin Jang; Seung Kyu Lee; Jae Boong Kim; Hye Yong Chu; Choochon Lee

doi:10.1063/1.102580

Thermal equilibrium behavior in inhomogeneous, undoped amorphous silicon

Jin Jang
, Seung Kyu Lee
, Jae Boong Kim
, Hye Yong Chu
, Choochon Lee

Research output: Contribution to journal › Article › peer-review

Abstract

We report a new thermal equilibrium behavior in inhomogeneous, undoped amorphous silicon. The room-temperature conductivity increases by two orders of magnitude compared with the annealed value just after fast cooling from above 180°C. The decay of the excess conductivity follows (time)^- ¹ behavior, which is independent of the temperature. We suggest a possible explanation based on the material inhomogeneity.

Original language	English
Pages (from-to)	1101-1103
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	12
DOIs	https://doi.org/10.1063/1.102580
Publication status	Published - 1990

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@article{55b7e79e8cc44abf9412584b2c5a1104,

title = "Thermal equilibrium behavior in inhomogeneous, undoped amorphous silicon",

abstract = "We report a new thermal equilibrium behavior in inhomogeneous, undoped amorphous silicon. The room-temperature conductivity increases by two orders of magnitude compared with the annealed value just after fast cooling from above 180°C. The decay of the excess conductivity follows (time)- 1 behavior, which is independent of the temperature. We suggest a possible explanation based on the material inhomogeneity.",

author = "Jin Jang and Lee, \{Seung Kyu\} and Kim, \{Jae Boong\} and Chu, \{Hye Yong\} and Choochon Lee",

year = "1990",

doi = "10.1063/1.102580",

language = "English",

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pages = "1101--1103",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Thermal equilibrium behavior in inhomogeneous, undoped amorphous silicon

AU - Jang, Jin

AU - Lee, Seung Kyu

AU - Kim, Jae Boong

AU - Chu, Hye Yong

AU - Lee, Choochon

PY - 1990

Y1 - 1990

N2 - We report a new thermal equilibrium behavior in inhomogeneous, undoped amorphous silicon. The room-temperature conductivity increases by two orders of magnitude compared with the annealed value just after fast cooling from above 180°C. The decay of the excess conductivity follows (time)- 1 behavior, which is independent of the temperature. We suggest a possible explanation based on the material inhomogeneity.

AB - We report a new thermal equilibrium behavior in inhomogeneous, undoped amorphous silicon. The room-temperature conductivity increases by two orders of magnitude compared with the annealed value just after fast cooling from above 180°C. The decay of the excess conductivity follows (time)- 1 behavior, which is independent of the temperature. We suggest a possible explanation based on the material inhomogeneity.

UR - https://www.scopus.com/pages/publications/36549100236

U2 - 10.1063/1.102580

DO - 10.1063/1.102580

M3 - Article

AN - SCOPUS:36549100236

SN - 0003-6951

VL - 56

SP - 1101

EP - 1103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Thermal equilibrium behavior in inhomogeneous, undoped amorphous silicon

Abstract

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