Thermal equilibrium process in hydrogenated amorphous silicon npnp doping-modulated superlattices

Thermal equilibrium process in hydrogenated amorphous silicon(a-Si:H) npnp doping-modulated superlattices has been studied. Thermal quenching from above 130°C, equilibrium temperature of n-type a-Si:H, gives rise to the increase of defect density of p-layers and raises the Fermi-level of n-layers in a-Si:H npnp superlattices. The resultsv suggest that both dangling bonds and dopants are involved in thermal equilibration of doped a-Si:H and the dangling bonds of a p-type a-Si:H increase upon thermal quenching.