TY - JOUR
T1 - Thin ferroelectric film between double schottky barriers
AU - Delimova, Lyuba A.
AU - Grekhov, Igor V.
AU - Mashovets, Dmitri V.
AU - Shin, Sangmin
AU - Koo, June Mo
AU - Kim, Suk Pil
AU - Park, Youngsoo
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005
Y1 - 2005
N2 - Thin-film uniform metal-ferroelectric-metal (M/F/M) structure between back-to-back Schottky barriers (SBs) is considered. The ferroelectric is assumed to be a p-type semiconductor, and the film thickness is far less than the depletion layer induced by the SB. Numerical integration of the Poisson equation is used to analyze the influence of double Shottky barriers on the distributions of the electric field, potential, and polarization across the film thickness as functions of external bias and the film electrical history. The range of structure parameters is determined, where the Poisson equation for M/F/M structure can be solved analytically providing an obvious and easy-to-interpret representation of the M/F/M behavior. Electric fields induced by back-to-back SBs under zero external bias compensate each other to a great extent. As a result, the potential across the ferroelectric film remains virtually unchanged providing the flat-band condition in the energy diagram of zero-biased M/F/M structure; in fact, the external bias applied to M/F/M structure exerts influence only on the reverse-biased barrier.
AB - Thin-film uniform metal-ferroelectric-metal (M/F/M) structure between back-to-back Schottky barriers (SBs) is considered. The ferroelectric is assumed to be a p-type semiconductor, and the film thickness is far less than the depletion layer induced by the SB. Numerical integration of the Poisson equation is used to analyze the influence of double Shottky barriers on the distributions of the electric field, potential, and polarization across the film thickness as functions of external bias and the film electrical history. The range of structure parameters is determined, where the Poisson equation for M/F/M structure can be solved analytically providing an obvious and easy-to-interpret representation of the M/F/M behavior. Electric fields induced by back-to-back SBs under zero external bias compensate each other to a great extent. As a result, the potential across the ferroelectric film remains virtually unchanged providing the flat-band condition in the energy diagram of zero-biased M/F/M structure; in fact, the external bias applied to M/F/M structure exerts influence only on the reverse-biased barrier.
UR - http://www.scopus.com/inward/record.url?scp=20344398657&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:20344398657
SN - 0272-9172
VL - 830
SP - 183
EP - 188
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
M1 - D3.19
T2 - Materials and Processes for Nonvolatile Memories
Y2 - 30 November 2004 through 2 December 2004
ER -