Abstract
Controllable growth and facile transferability of a crystalline film with desired characteristics, acquired by tuning composition and crystallographic orientation, become highly demanded for advanced flexible devices. Here the desired crystallographic orientations and facile transferability of a crystalline film can be achieved by “thru-hole epitaxy” in a straightforward and undemanding manner with no limitation on the layer number and polarity of a 2D space layer and the surface characteristics. The crystallographic alignment can be established by the connectedness of the grown material to the substrate through a small net cross-sectional area of thru-holes, which also allows the straightforward detachment of the grown material. Thru-hole epitaxy can be adopted for the realization of advanced flexible devices on large scale with desired crystallographic orientation and facile transferability.
| Original language | English |
|---|---|
| Article number | 2201406 |
| Journal | Advanced Materials Interfaces |
| Volume | 10 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 3 Feb 2023 |
Bibliographical note
Publisher Copyright:© 2022 The Authors. Advanced Materials Interfaces published by Wiley-VCH GmbH.
Keywords
- crystallographic alignment
- density functional theory
- gallium nitride
- hexagonal boron nitride
- thru-hole epitaxy
- transferability