Ti-O binding states of resistive switching TiO2 thin films prepared by reactive magnetron sputtering

Kwang Bae Lee; Kyung Haeng Lee; Jeong Ok Cha; Jeung Sun Ahn

doi:10.3938/jkps.53.1996

Ti-O binding states of resistive switching TiO₂ thin films prepared by reactive magnetron sputtering

Kwang Bae Lee
, Kyung Haeng Lee
, Jeong Ok Cha
, Jeung Sun Ahn

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The relations of the Ti-O binding states to the resistive switching behaviors of TiO₂ thin films have been investigated. TiO₂ thin films in a Pt/TiO₂/Pt structure were prepared by reactive magnetron sputtering with various preparation conditions, such as the oxygen partial pressure (P(O₂)) and the substrate temperature (T _s). At the optimized preparation conditions for reproducible resistive switching TiO₂ thin films (T_s = 100°C and P(O₂) = 0.1 mTorr), the O/Ti ratio in the bulk was nearly stoichiometric, 1.95, but the surface Ti-O binding state was heavily oxidized in the form of TiO_2.5. We suggest that the molar fraction of the Ti₂O₃ in the bulk is related to the reproducible resistive switching behaviors, which, in turn, may be related to the filamentary mechanism in TiO₂ thin films.

Original language	English
Pages (from-to)	1996-2001
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	53
Issue number	4
DOIs	https://doi.org/10.3938/jkps.53.1996
Publication status	Published - Oct 2008

Keywords

RRAM
Sputtering method
XPS

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10.3938/jkps.53.1996

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title = "Ti-O binding states of resistive switching TiO2 thin films prepared by reactive magnetron sputtering",

abstract = "The relations of the Ti-O binding states to the resistive switching behaviors of TiO2 thin films have been investigated. TiO2 thin films in a Pt/TiO2/Pt structure were prepared by reactive magnetron sputtering with various preparation conditions, such as the oxygen partial pressure (P(O2)) and the substrate temperature (T s). At the optimized preparation conditions for reproducible resistive switching TiO2 thin films (Ts = 100°C and P(O2) = 0.1 mTorr), the O/Ti ratio in the bulk was nearly stoichiometric, 1.95, but the surface Ti-O binding state was heavily oxidized in the form of TiO2.5. We suggest that the molar fraction of the Ti2O3 in the bulk is related to the reproducible resistive switching behaviors, which, in turn, may be related to the filamentary mechanism in TiO2 thin films.",

keywords = "RRAM, Sputtering method, XPS",

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doi = "10.3938/jkps.53.1996",

language = "English",

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pages = "1996--2001",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

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TY - JOUR

T1 - Ti-O binding states of resistive switching TiO2 thin films prepared by reactive magnetron sputtering

AU - Lee, Kwang Bae

AU - Lee, Kyung Haeng

AU - Cha, Jeong Ok

AU - Ahn, Jeung Sun

PY - 2008/10

Y1 - 2008/10

N2 - The relations of the Ti-O binding states to the resistive switching behaviors of TiO2 thin films have been investigated. TiO2 thin films in a Pt/TiO2/Pt structure were prepared by reactive magnetron sputtering with various preparation conditions, such as the oxygen partial pressure (P(O2)) and the substrate temperature (T s). At the optimized preparation conditions for reproducible resistive switching TiO2 thin films (Ts = 100°C and P(O2) = 0.1 mTorr), the O/Ti ratio in the bulk was nearly stoichiometric, 1.95, but the surface Ti-O binding state was heavily oxidized in the form of TiO2.5. We suggest that the molar fraction of the Ti2O3 in the bulk is related to the reproducible resistive switching behaviors, which, in turn, may be related to the filamentary mechanism in TiO2 thin films.

AB - The relations of the Ti-O binding states to the resistive switching behaviors of TiO2 thin films have been investigated. TiO2 thin films in a Pt/TiO2/Pt structure were prepared by reactive magnetron sputtering with various preparation conditions, such as the oxygen partial pressure (P(O2)) and the substrate temperature (T s). At the optimized preparation conditions for reproducible resistive switching TiO2 thin films (Ts = 100°C and P(O2) = 0.1 mTorr), the O/Ti ratio in the bulk was nearly stoichiometric, 1.95, but the surface Ti-O binding state was heavily oxidized in the form of TiO2.5. We suggest that the molar fraction of the Ti2O3 in the bulk is related to the reproducible resistive switching behaviors, which, in turn, may be related to the filamentary mechanism in TiO2 thin films.

KW - RRAM

KW - Sputtering method

KW - XPS

UR - https://www.scopus.com/pages/publications/55949101356

U2 - 10.3938/jkps.53.1996

DO - 10.3938/jkps.53.1996

M3 - Article

AN - SCOPUS:55949101356

SN - 0374-4884

VL - 53

SP - 1996

EP - 2001

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 4

ER -

Ti-O binding states of resistive switching TiO₂ thin films prepared by reactive magnetron sputtering

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Keywords

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