Time-integrated and time-resolved photoluminescence properties of Si nanocrystal/SiO2 multilayers grown by ion-beam sputtering

Sung Kim; Yong Min Park; Suk Ho Choi; Kyung Joong Kim

doi:10.3938/jkps.50.567

Time-integrated and time-resolved photoluminescence properties of Si nanocrystal/SiO₂ multilayers grown by ion-beam sputtering

Sung Kim, Yong Min Park, Suk Ho Choi, Kyung Joong Kim

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Fifty-period SiO₂/SiO_x multilayers (MLs) were prepared on Si wafers by ion beam sputtering deposition and subsequently annealed to form Si nanocrystals (NCs) in the SiO_x layer. Time-integrated (TI) and time-resolved photoluminescence (PL) spectroscopy was employed to study the exciton migration, the state-filling effect, and the carrier lifetime of the NC MLs. The peak shifts of the TIPL spectra reflect the temperature and the size dependences of the migration process. The PL intensities for different energy levels of quantum-confined NCs decay with a stretched exponential function, and the decay times are in the range of 20 ∼ 160 mu;s, depending on the observation energy and the NC size, which are discussed based on the effects of the quantum confinement and the state-filling of NCs.

Original language	English
Pages (from-to)	567-570
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	3
DOIs	https://doi.org/10.3938/jkps.50.567
Publication status	Published - Mar 2007

Keywords

Exciton migration
Lifetime
Photoluminescence
Si nanocrystal
State-filling
Stoichiometry

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title = "Time-integrated and time-resolved photoluminescence properties of Si nanocrystal/SiO2 multilayers grown by ion-beam sputtering",

abstract = "Fifty-period SiO2/SiOx multilayers (MLs) were prepared on Si wafers by ion beam sputtering deposition and subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. Time-integrated (TI) and time-resolved photoluminescence (PL) spectroscopy was employed to study the exciton migration, the state-filling effect, and the carrier lifetime of the NC MLs. The peak shifts of the TIPL spectra reflect the temperature and the size dependences of the migration process. The PL intensities for different energy levels of quantum-confined NCs decay with a stretched exponential function, and the decay times are in the range of 20 ∼ 160 mu;s, depending on the observation energy and the NC size, which are discussed based on the effects of the quantum confinement and the state-filling of NCs.",

keywords = "Exciton migration, Lifetime, Photoluminescence, Si nanocrystal, State-filling, Stoichiometry",

author = "Sung Kim and Park, {Yong Min} and Choi, {Suk Ho} and Kim, {Kyung Joong}",

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T1 - Time-integrated and time-resolved photoluminescence properties of Si nanocrystal/SiO2 multilayers grown by ion-beam sputtering

AU - Kim, Sung

AU - Park, Yong Min

AU - Choi, Suk Ho

AU - Kim, Kyung Joong

PY - 2007/3

Y1 - 2007/3

N2 - Fifty-period SiO2/SiOx multilayers (MLs) were prepared on Si wafers by ion beam sputtering deposition and subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. Time-integrated (TI) and time-resolved photoluminescence (PL) spectroscopy was employed to study the exciton migration, the state-filling effect, and the carrier lifetime of the NC MLs. The peak shifts of the TIPL spectra reflect the temperature and the size dependences of the migration process. The PL intensities for different energy levels of quantum-confined NCs decay with a stretched exponential function, and the decay times are in the range of 20 ∼ 160 mu;s, depending on the observation energy and the NC size, which are discussed based on the effects of the quantum confinement and the state-filling of NCs.

AB - Fifty-period SiO2/SiOx multilayers (MLs) were prepared on Si wafers by ion beam sputtering deposition and subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. Time-integrated (TI) and time-resolved photoluminescence (PL) spectroscopy was employed to study the exciton migration, the state-filling effect, and the carrier lifetime of the NC MLs. The peak shifts of the TIPL spectra reflect the temperature and the size dependences of the migration process. The PL intensities for different energy levels of quantum-confined NCs decay with a stretched exponential function, and the decay times are in the range of 20 ∼ 160 mu;s, depending on the observation energy and the NC size, which are discussed based on the effects of the quantum confinement and the state-filling of NCs.

KW - Exciton migration

KW - Lifetime

KW - Photoluminescence

KW - Si nanocrystal

KW - State-filling

KW - Stoichiometry

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DO - 10.3938/jkps.50.567

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JF - Journal of the Korean Physical Society

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Time-integrated and time-resolved photoluminescence properties of Si nanocrystal/SiO₂ multilayers grown by ion-beam sputtering

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