Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique

Young Min Park; Young Ju Park; Kwang Moo Kim; Jae Cheol Shin; Jin Dong Song; Jung Il Lee; Keon Ho Yoo

doi:10.1109/ISCS.2003.1239956

Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique

Young Min Park, Young Ju Park, Kwang Moo Kim, Jae Cheol Shin, Jin Dong Song, Jung Il Lee, Keon Ho Yoo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We investigated a transient behavior of InGaAs self-assembled quantum dots (SAQD) formed by atomic layer epitaxy technique (ALE). Performing some cycles of InAs/GaAs alternate source supply between InGaAs layers, InGaAs dots-in-a-well structures were spontaneously grown. In order to elucidate the growth mechanism of dots-in-a-well structure, premature SAQD was intentionally prepared by controlling the cycles of source supply. Through the measurement of photoluminescence, not only the discrete quantum well state but also broad emission band was observed, indicating that a mixed structure of QW and QD was existed in a quantum well. The mixed behaviors of the premature QDs were studied in detail using temperature dependence of photoluminescence measurements.

Original language	English
Title of host publication	2003 International Symposium on Compound Semiconductors, ISCS 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	161-162
Number of pages	2
ISBN (Electronic)	0780378202
DOIs	https://doi.org/10.1109/ISCS.2003.1239956
Publication status	Published - 2003
Event	2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: 25 Aug 2003 → 27 Aug 2003

Publication series

Name	IEEE International Symposium on Compound Semiconductors, Proceedings
Volume	2003-January

Conference

Conference	2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	25/08/03 → 27/08/03

Bibliographical note

Publisher Copyright:
© 2003 IEEE.

Keywords

Assembly
Atomic layer deposition
Atomic measurements
Epitaxial growth
Gallium arsenide
Indium gallium arsenide
Photoluminescence
Quantum dots
Temperature dependence
US Department of Transportation

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10.1109/ISCS.2003.1239956

Cite this

Park, Y. M., Park, Y. J., Kim, K. M., Shin, J. C., Song, J. D., Lee, J. I., & Yoo, K. H. (2003). Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique. In 2003 International Symposium on Compound Semiconductors, ISCS 2003 (pp. 161-162). Article 1239956 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239956

@inproceedings{f20e5d13a56947da9ed6b612f21d9071,

title = "Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique",

abstract = "We investigated a transient behavior of InGaAs self-assembled quantum dots (SAQD) formed by atomic layer epitaxy technique (ALE). Performing some cycles of InAs/GaAs alternate source supply between InGaAs layers, InGaAs dots-in-a-well structures were spontaneously grown. In order to elucidate the growth mechanism of dots-in-a-well structure, premature SAQD was intentionally prepared by controlling the cycles of source supply. Through the measurement of photoluminescence, not only the discrete quantum well state but also broad emission band was observed, indicating that a mixed structure of QW and QD was existed in a quantum well. The mixed behaviors of the premature QDs were studied in detail using temperature dependence of photoluminescence measurements.",

keywords = "Assembly, Atomic layer deposition, Atomic measurements, Epitaxial growth, Gallium arsenide, Indium gallium arsenide, Photoluminescence, Quantum dots, Temperature dependence, US Department of Transportation",

author = "Park, {Young Min} and Park, {Young Ju} and Kim, {Kwang Moo} and Shin, {Jae Cheol} and Song, {Jin Dong} and Lee, {Jung Il} and Yoo, {Keon Ho}",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",

year = "2003",

doi = "10.1109/ISCS.2003.1239956",

language = "English",

series = "IEEE International Symposium on Compound Semiconductors, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "161--162",

booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",

address = "United States",

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Park, YM, Park, YJ, Kim, KM, Shin, JC, Song, JD, Lee, JI & Yoo, KH 2003, Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique. in 2003 International Symposium on Compound Semiconductors, ISCS 2003., 1239956, IEEE International Symposium on Compound Semiconductors, Proceedings, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 161-162, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 25/08/03. https://doi.org/10.1109/ISCS.2003.1239956

Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique. / Park, Young Min; Park, Young Ju; Kim, Kwang Moo et al.
2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 161-162 1239956 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique

AU - Park, Young Min

AU - Park, Young Ju

AU - Kim, Kwang Moo

AU - Shin, Jae Cheol

AU - Song, Jin Dong

AU - Lee, Jung Il

AU - Yoo, Keon Ho

PY - 2003

Y1 - 2003

N2 - We investigated a transient behavior of InGaAs self-assembled quantum dots (SAQD) formed by atomic layer epitaxy technique (ALE). Performing some cycles of InAs/GaAs alternate source supply between InGaAs layers, InGaAs dots-in-a-well structures were spontaneously grown. In order to elucidate the growth mechanism of dots-in-a-well structure, premature SAQD was intentionally prepared by controlling the cycles of source supply. Through the measurement of photoluminescence, not only the discrete quantum well state but also broad emission band was observed, indicating that a mixed structure of QW and QD was existed in a quantum well. The mixed behaviors of the premature QDs were studied in detail using temperature dependence of photoluminescence measurements.

AB - We investigated a transient behavior of InGaAs self-assembled quantum dots (SAQD) formed by atomic layer epitaxy technique (ALE). Performing some cycles of InAs/GaAs alternate source supply between InGaAs layers, InGaAs dots-in-a-well structures were spontaneously grown. In order to elucidate the growth mechanism of dots-in-a-well structure, premature SAQD was intentionally prepared by controlling the cycles of source supply. Through the measurement of photoluminescence, not only the discrete quantum well state but also broad emission band was observed, indicating that a mixed structure of QW and QD was existed in a quantum well. The mixed behaviors of the premature QDs were studied in detail using temperature dependence of photoluminescence measurements.

KW - Assembly

KW - Atomic layer deposition

KW - Atomic measurements

KW - Epitaxial growth

KW - Gallium arsenide

KW - Indium gallium arsenide

KW - Photoluminescence

KW - Quantum dots

KW - Temperature dependence

KW - US Department of Transportation

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U2 - 10.1109/ISCS.2003.1239956

DO - 10.1109/ISCS.2003.1239956

M3 - Conference contribution

AN - SCOPUS:84943549236

T3 - IEEE International Symposium on Compound Semiconductors, Proceedings

SP - 161

EP - 162

BT - 2003 International Symposium on Compound Semiconductors, ISCS 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 International Symposium on Compound Semiconductors, ISCS 2003

Y2 - 25 August 2003 through 27 August 2003

ER -

Park YM, Park YJ, Kim KM, Shin JC, Song JD, Lee JI et al. Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique. In 2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 161-162. 1239956. (IEEE International Symposium on Compound Semiconductors, Proceedings). doi: 10.1109/ISCS.2003.1239956

Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique

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