Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique

Y. M. Park; Y. J. Park; K. M. Kim; J. C. Shin; J. D. Song; J. I. Lee; K. H. Yoo

doi:10.1109/ISCSPC.2003.1354430

Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique

Y. M. Park, Y. J. Park, K. M. Kim, J. C. Shin, J. D. Song, J. I. Lee, K. H. Yoo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We investigated the effects of carrier dynamics on the temperature dependence of the photoluminescence (PL) of an InGaAs dots-in-a-well (DWELL) structure. The quantum dots (QDs) were formed by the atomic layer epitaxy (ALE) technique alternately supplying InAs and GaAs sources. It was found from the PL measurements at various temperatures that the DWELL structure was accomplished through the generation process of the intermediate layer between the quantum well (QW) and the QDs during the formation of the QDs inside a QW. The thermal quenching equations on the basis of the rate equation model can be explained by the carrier dynamics, which included in the radiative recombination, the carrier thermal escape and the carrier capture process occurring in these three layers, i.e. QW, QD and the intermediate layer.

Original language	English
Title of host publication	2003 30th International Symposium on Compound Semiconductors, ISCS 2003
Subtitle of host publication	Post-Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	49-54
Number of pages	6
ISBN (Electronic)	0780386140
DOIs	https://doi.org/10.1109/ISCSPC.2003.1354430
Publication status	Published - 2003
Event	30th International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: 25 Aug 2003 → 27 Aug 2003

Publication series

Name	IEEE International Symposium on Compound Semiconductors, Proceedings
Volume	2003-August

Conference

Conference	30th International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	25/08/03 → 27/08/03

Bibliographical note

Publisher Copyright:
© 2004 IEEE.

Access to Document

10.1109/ISCSPC.2003.1354430

Cite this

Park, Y. M., Park, Y. J., Kim, K. M., Shin, J. C., Song, J. D., Lee, J. I., & Yoo, K. H. (2003). Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique. In 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings (pp. 49-54). Article 1354430 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCSPC.2003.1354430

Park, Y. M. ; Park, Y. J. ; Kim, K. M. et al. / Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique. 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 49-54 (IEEE International Symposium on Compound Semiconductors, Proceedings).

@inproceedings{21312f771e084ef89f2095fedf9ba751,

title = "Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique",

abstract = "We investigated the effects of carrier dynamics on the temperature dependence of the photoluminescence (PL) of an InGaAs dots-in-a-well (DWELL) structure. The quantum dots (QDs) were formed by the atomic layer epitaxy (ALE) technique alternately supplying InAs and GaAs sources. It was found from the PL measurements at various temperatures that the DWELL structure was accomplished through the generation process of the intermediate layer between the quantum well (QW) and the QDs during the formation of the QDs inside a QW. The thermal quenching equations on the basis of the rate equation model can be explained by the carrier dynamics, which included in the radiative recombination, the carrier thermal escape and the carrier capture process occurring in these three layers, i.e. QW, QD and the intermediate layer.",

author = "Park, {Y. M.} and Park, {Y. J.} and Kim, {K. M.} and Shin, {J. C.} and Song, {J. D.} and Lee, {J. I.} and Yoo, {K. H.}",

note = "Publisher Copyright: {\textcopyright} 2004 IEEE.; 30th International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",

year = "2003",

doi = "10.1109/ISCSPC.2003.1354430",

language = "English",

series = "IEEE International Symposium on Compound Semiconductors, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "49--54",

booktitle = "2003 30th International Symposium on Compound Semiconductors, ISCS 2003",

address = "United States",

}

Park, YM, Park, YJ, Kim, KM, Shin, JC, Song, JD, Lee, JI & Yoo, KH 2003, Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique. in 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings., 1354430, IEEE International Symposium on Compound Semiconductors, Proceedings, vol. 2003-August, Institute of Electrical and Electronics Engineers Inc., pp. 49-54, 30th International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 25/08/03. https://doi.org/10.1109/ISCSPC.2003.1354430

Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique. / Park, Y. M.; Park, Y. J.; Kim, K. M. et al.
2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 49-54 1354430 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique

AU - Park, Y. M.

AU - Park, Y. J.

AU - Kim, K. M.

AU - Shin, J. C.

AU - Song, J. D.

AU - Lee, J. I.

AU - Yoo, K. H.

PY - 2003

Y1 - 2003

N2 - We investigated the effects of carrier dynamics on the temperature dependence of the photoluminescence (PL) of an InGaAs dots-in-a-well (DWELL) structure. The quantum dots (QDs) were formed by the atomic layer epitaxy (ALE) technique alternately supplying InAs and GaAs sources. It was found from the PL measurements at various temperatures that the DWELL structure was accomplished through the generation process of the intermediate layer between the quantum well (QW) and the QDs during the formation of the QDs inside a QW. The thermal quenching equations on the basis of the rate equation model can be explained by the carrier dynamics, which included in the radiative recombination, the carrier thermal escape and the carrier capture process occurring in these three layers, i.e. QW, QD and the intermediate layer.

AB - We investigated the effects of carrier dynamics on the temperature dependence of the photoluminescence (PL) of an InGaAs dots-in-a-well (DWELL) structure. The quantum dots (QDs) were formed by the atomic layer epitaxy (ALE) technique alternately supplying InAs and GaAs sources. It was found from the PL measurements at various temperatures that the DWELL structure was accomplished through the generation process of the intermediate layer between the quantum well (QW) and the QDs during the formation of the QDs inside a QW. The thermal quenching equations on the basis of the rate equation model can be explained by the carrier dynamics, which included in the radiative recombination, the carrier thermal escape and the carrier capture process occurring in these three layers, i.e. QW, QD and the intermediate layer.

UR - http://www.scopus.com/inward/record.url?scp=84979226359&partnerID=8YFLogxK

U2 - 10.1109/ISCSPC.2003.1354430

DO - 10.1109/ISCSPC.2003.1354430

M3 - Conference contribution

AN - SCOPUS:84979226359

T3 - IEEE International Symposium on Compound Semiconductors, Proceedings

SP - 49

EP - 54

BT - 2003 30th International Symposium on Compound Semiconductors, ISCS 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 30th International Symposium on Compound Semiconductors, ISCS 2003

Y2 - 25 August 2003 through 27 August 2003

ER -

Park YM, Park YJ, Kim KM, Shin JC, Song JD, Lee JI et al. Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique. In 2003 30th International Symposium on Compound Semiconductors, ISCS 2003: Post-Conference Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 49-54. 1354430. (IEEE International Symposium on Compound Semiconductors, Proceedings). doi: 10.1109/ISCSPC.2003.1354430

Transient behavior of self-assembled quantum dots formed by atomic layer epitaxy technique

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