Transparent flexible circuits based on amorphous-indium-gallium-zincoxide thin-film transistors

Mallory Mativenga; Min Hyuk Choi; Jae Won Choi; Jin Jang

doi:10.1109/LED.2010.2093504

Transparent flexible circuits based on amorphous-indium-gallium-zincoxide thin-film transistors

Mallory Mativenga
, Min Hyuk Choi
, Jae Won Choi
, Jin Jang

Research output: Contribution to journal › Article › peer-review

202 Citations (Scopus)

Abstract

Circuits implemented with high-performance amorphous-indiumgalliumzincoxide thin-film transistors (TFTs) are realized on polyimide/polyethylene- terephthalate plastic substrates. The TFTs on plastic exhibit a saturation mobility of 19cm²/V.sand a gate voltage swing of sim0.14 V/dec. For an input of 20 V, an 11-stage ring oscillator operates at 94.8 kHz with a propagation delay time of 0.48 mus. A shift register, consisting of ten TFTs and one capacitor, operates well with good bias stability. AC driving of pull-down TFTs gives the gate driver an improved lifetime of over ten years.

Original language	English
Article number	5671459
Pages (from-to)	170-172
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	2
DOIs	https://doi.org/10.1109/LED.2010.2093504
Publication status	Published - Feb 2011

Bibliographical note

Funding Information:
Manuscript received October 27, 2010; revised November 2, 2010; accepted November 5, 2010. Date of publication December 17, 2010; date of current version January 26, 2011. This work was supported by MKE/KEIT under Industrial Strategic Technology Development Program 10035225 (Development of core technology for high-performance AMOLED on plastic). The review of this letter was arranged by Editor J. K. O. Sin.

Keywords

Amorphous indiumgalliumzincoxide (a-IGZO)
gate driver
polyethylene terephthalate (PET)
ring oscillator
shift register

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10.1109/LED.2010.2093504

Cite this

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title = "Transparent flexible circuits based on amorphous-indium-gallium-zincoxide thin-film transistors",

abstract = "Circuits implemented with high-performance amorphous-indiumgalliumzincoxide thin-film transistors (TFTs) are realized on polyimide/polyethylene- terephthalate plastic substrates. The TFTs on plastic exhibit a saturation mobility of 19cm2/V.sand a gate voltage swing of sim0.14 V/dec. For an input of 20 V, an 11-stage ring oscillator operates at 94.8 kHz with a propagation delay time of 0.48 mus. A shift register, consisting of ten TFTs and one capacitor, operates well with good bias stability. AC driving of pull-down TFTs gives the gate driver an improved lifetime of over ten years.",

keywords = "Amorphous indiumgalliumzincoxide (a-IGZO), gate driver, polyethylene terephthalate (PET), ring oscillator, shift register",

author = "Mallory Mativenga and Choi, \{Min Hyuk\} and Choi, \{Jae Won\} and Jin Jang",

note = "Funding Information: Manuscript received October 27, 2010; revised November 2, 2010; accepted November 5, 2010. Date of publication December 17, 2010; date of current version January 26, 2011. This work was supported by MKE/KEIT under Industrial Strategic Technology Development Program 10035225 (Development of core technology for high-performance AMOLED on plastic). The review of this letter was arranged by Editor J. K. O. Sin.",

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doi = "10.1109/LED.2010.2093504",

language = "English",

volume = "32",

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AU - Choi, Jae Won

AU - Jang, Jin

N1 - Funding Information: Manuscript received October 27, 2010; revised November 2, 2010; accepted November 5, 2010. Date of publication December 17, 2010; date of current version January 26, 2011. This work was supported by MKE/KEIT under Industrial Strategic Technology Development Program 10035225 (Development of core technology for high-performance AMOLED on plastic). The review of this letter was arranged by Editor J. K. O. Sin.

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N2 - Circuits implemented with high-performance amorphous-indiumgalliumzincoxide thin-film transistors (TFTs) are realized on polyimide/polyethylene- terephthalate plastic substrates. The TFTs on plastic exhibit a saturation mobility of 19cm2/V.sand a gate voltage swing of sim0.14 V/dec. For an input of 20 V, an 11-stage ring oscillator operates at 94.8 kHz with a propagation delay time of 0.48 mus. A shift register, consisting of ten TFTs and one capacitor, operates well with good bias stability. AC driving of pull-down TFTs gives the gate driver an improved lifetime of over ten years.

AB - Circuits implemented with high-performance amorphous-indiumgalliumzincoxide thin-film transistors (TFTs) are realized on polyimide/polyethylene- terephthalate plastic substrates. The TFTs on plastic exhibit a saturation mobility of 19cm2/V.sand a gate voltage swing of sim0.14 V/dec. For an input of 20 V, an 11-stage ring oscillator operates at 94.8 kHz with a propagation delay time of 0.48 mus. A shift register, consisting of ten TFTs and one capacitor, operates well with good bias stability. AC driving of pull-down TFTs gives the gate driver an improved lifetime of over ten years.

KW - Amorphous indiumgalliumzincoxide (a-IGZO)

KW - gate driver

KW - polyethylene terephthalate (PET)

KW - ring oscillator

KW - shift register

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DO - 10.1109/LED.2010.2093504

M3 - Article

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SN - 0741-3106

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SP - 170

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

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ER -

Transparent flexible circuits based on amorphous-indium-gallium-zincoxide thin-film transistors

Abstract

Bibliographical note

Keywords

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